SCHEMBL950161

SCHEMBL950161

O=C(OCC(O)(C(F)(F)F)C(F)(F)F)C1CC2C=CC1C2

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 10/20 0.45
RAB9A P51151 1/20 0.45
KMT2A Q03164 3/20 0.43
LMNA P02545 2/20 0.41
KDM4E B2RXH2 2/20 0.41
POLB P06746 3/20 0.41
HSD17B10 Q99714 2/20 0.41
APEX1 P27695 1/20 0.41
RECQL P46063 1/20 0.41
BLM P54132 1/20 0.41
ESR2 Q92731 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
HPGD P15428 1/20 0.41
MAPK1 P28482 2/20 0.37
MAPT P10636 1/20 0.37
MEN1 O00255 1/20 0.34
ALOX15 P16050 1/20 0.34
TSHR P16473 1/20 0.34
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14410083 1.00 ALDH1A1 (0.45) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL14133965 0.87 ALDH1A1 (0.44) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL145490 0.87 ALDH1A1 (0.46) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL12228709 0.87 ALDH1A1 (0.46) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL5856448 0.86 ALDH1A1 (0.48) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL13645141 0.86 ALDH1A1 (0.44) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL25779677 0.86 ALDH1A1 (0.44) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL543629 0.85 ALDH1A1 (0.47) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL4167321 0.83 ALDH1A1 (0.42) ALDH1A1RAB9AKMT2ALMNAKDM4E
SCHEMBL12895569 0.83 ALDH1A1 (0.44) ALDH1A1RAB9AKMT2ALMNAKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230213862-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-10996378-B2 Antireflective film, method of producing antireflective film, and eyeglass type display SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-04 US disclosed
US-20190196066-A1 ANTIREFLECTIVE FILM, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-7868199-B2 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning EUDYNA DEVICES INC. (JP) 2011-01-11 US disclosed
US-7868199-B2 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning EUDYNA DEVICES INC. (JP) 2011-01-11 US disclosed
US-7868199-B2 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning EUDYNA DEVICES INC. (JP) 2011-01-11 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 ALDH1A1 1887/4885RAB9A 3670/4885KMT2A 1434/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.