SCHEMBL9587809

SCHEMBL9587809

CC(CCc1ccncc1)c1ccccc1

nearest known ligand 0.57

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
SLC6A3 Q01959 3/20 0.47
SLC6A2 P23975 2/20 0.47
SLC6A4 P31645 2/20 0.47
RIPK1 Q13546 1/20 0.47
CYP1A2 P05177 3/20 0.44
CYP3A4 P08684 3/20 0.44
CYP2D6 P10635 3/20 0.44
CYP2C9 P11712 3/20 0.44
CYP2C19 P33261 3/20 0.44
HIF1A Q16665 1/20 0.44
TAAR1 Q96RJ0 2/20 0.44
TDP1 Q9NUW8 1/20 0.42
ABCB1 P08183 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9587795 0.93 SLC6A2 (0.52) SLC6A3SLC6A2SLC6A4RIPK1CYP1A2
SCHEMBL1324113 0.86 RIPK1 (0.55) SLC6A3SLC6A2SLC6A4RIPK1CYP1A2
SCHEMBL21524663 0.84 SLC6A2 (0.58) SLC6A3SLC6A2SLC6A4RIPK1TAAR1
SCHEMBL9588733 0.82 SLC6A2 (0.49) SLC6A3SLC6A2SLC6A4RIPK1CYP1A2
SCHEMBL6888087 0.81 SLC6A4 (0.60) SLC6A3SLC6A2SLC6A4CYP3A4TAAR1
SCHEMBL9588396 0.81 SLC6A2 (0.47) SLC6A3SLC6A2SLC6A4CYP1A2CYP3A4
SCHEMBL9587937 0.80 ALDH1A1 (0.43) CYP1A2TAAR1
SCHEMBL9588633 0.80 SLC6A2 (0.46) SLC6A3SLC6A2SLC6A4
SCHEMBL9587151 0.80 SLC6A2 (0.46) SLC6A3SLC6A2SLC6A4
SCHEMBL6546640 0.79 ALDH1A1 (0.50) RIPK1CYP1A2TAAR1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7897458-B2 Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereof KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION (KR) 2011-03-01 US disclosed
US-20100276747-A1 Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory device LEE JANG-SIK 2010-11-04 US disclosed
US-20080237692-A1 Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereof KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION (KR) 2008-10-02 US disclosed
US-5262420-A Phenylalkylpyridines IDEMITSU KOSAN CO., LTD. (JP) 1993-11-16 US disclosed
EP-0383950-A1 PYRIDINE DERIVATIVES AND INSECTICIDAL AND MITICIDAL AGENT CONTAINING SAME AS ACTIVE INGREDIENT IDEMITSU KOSAN COMPANY LIMITED (JP) 1990-08-29 EP disclosed