SCHEMBL959438

SCHEMBL959438

CO[Si](OC)(OC)c1ccccc1C(C)C

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.41
GABRB2 P47870 2/20 0.41
GABRG2 P18507 2/20 0.38
GABRB3 P28472 2/20 0.38
FAAH O00519 2/20 0.38
CYP1A2 P05177 2/20 0.38
CYP3A4 P08684 2/20 0.38
TSHR P16473 2/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
LMNA P02545 1/20 0.38
HPGD P15428 1/20 0.38
GABRB1 P18505 1/20 0.38
PTGS1 P23219 1/20 0.38
SLC6A2 P23975 1/20 0.38
HTR2C P28335 1/20 0.38
GABRA5 P31644 1/20 0.38
GABRA3 P34903 1/20 0.38
HTR2B P41595 1/20 0.38
GABRA2 P47869 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19952805 0.83 GABRA1 (0.30) GABRA1GABRB2
SCHEMBL20658027 0.83 GABRA1 (0.41) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL10710920 0.80 TSHR (0.50) GABRA1GABRB2TSHRL3MBTL1NISCH
SCHEMBL17714484 0.80 TYR (0.40) CYP1A2CYP3A4TSHRMEN1CYP2C9
SCHEMBL13584505 0.80 CYP2D6 (0.32) CYP1A2CYP3A4CA1CA2LMNA
SCHEMBL332012 0.78 ALDH1A1 (0.41) CYP1A2CYP3A4TSHRCA1CA2
SCHEMBL30264142 0.78 ALDH1A1 (0.41) CYP1A2CYP3A4TSHRCA1CA2
SCHEMBL20658065 0.78 GABRA1 (0.38) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL21060565 0.76 CA1 (0.34) CYP1A2CYP3A4CA1CA2
Benzene SCHEMBL28228276 0.76 CA4 (0.41) CYP1A2TSHRCA1CA2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2216682-B1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST ADEKA CORP (JP) 2013-07-17 EP claimed
CN-107209303-B Far infrared ray reflective film, dispersion for forming far infrared ray reflective film, method for producing far infrared ray reflective film, far infrared ray reflective glass, and window 富士胶片株式会社 2020-07-14 CN disclosed
US-10647821-B2 Production process for silicone polymer TORAY FINE CHEMICALS CO., LTD. (JP) 2020-05-12 US disclosed
US-20190023848-A1 PRODUCTION PROCESS FOR SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2019-01-24 US disclosed
EP-2216682-B1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST ADEKA CORP (JP) 2013-07-17 EP disclosed
US-8211619-B2 Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist ADEKA CORPORATION (JP) 2012-07-03 US disclosed
US-20110000658-A1 HYDROPHILIC MEMBER FUJIFILM CORPORATION (JP) 2011-01-06 US disclosed
US-20100273104-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST A D E K A (ADEKA CORPORATION) (JP) 2010-10-28 US disclosed
EP-2239137-A1 HYDROPHILIC MEMBERS FUJIFILM Corporation (JP) 2010-10-13 EP disclosed
EP-2216682-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST Adeka Corporation (JP) 2010-08-11 EP disclosed