SCHEMBL9609352

SCHEMBL9609352

O=S(=O)(O)C(F)(F)C(F)(F)S(=O)(=O)N1CCC2CCCCC2C1

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CNR2 P34972 9/20 0.32
HSD11B1 P28845 1/20 0.32
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14884728 0.91 CNR2 (0.31) CNR2HSD11B1
SCHEMBL2742124 0.91 CNR2 (0.31) CNR2HSD11B1
SCHEMBL14941147 0.89 CNR2 (0.30) CNR2HSD11B1
SCHEMBL9608739 0.85 HSD11B1 (0.33) CNR2HSD11B1
SCHEMBL16787955 0.84 CNR2 (0.33) CNR2
SCHEMBL11921088 0.82 HTR7 (0.35) CNR2
SCHEMBL16171265 0.82 HSD11B1 (0.32) CNR2HSD11B1
SCHEMBL21235019 0.82 CNR2 (0.30) CNR2
SCHEMBL16263312 0.81 CNR2 (0.30) CNR2
SCHEMBL17407603 0.81 ALDH1A1 (0.32) ALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022045314-A1 METHOD FOR PRODUCING ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2022-03-03 WO disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-20120264054-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-10-18 US disclosed
US-20120264054-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-10-18 US disclosed
US-20120207978-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-16 US disclosed
US-20120135348-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-05-31 US disclosed