SCHEMBL9610684

SCHEMBL9610684

O=C(Oc1ccc2[nH]c(=O)oc2c1)c1ccccc1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 6/20 0.59
CA9 Q16790 3/20 0.59
CA12 O43570 2/20 0.59
POLB P06746 2/20 0.59
CREBBP Q92793 1/20 0.55
KDM4E B2RXH2 4/20 0.54
ALDH1A1 P00352 4/20 0.54
MAPT P10636 3/20 0.54
GAA P10253 3/20 0.54
GLA P06280 2/20 0.54
NPBWR1 P48145 1/20 0.54
MEN1 O00255 2/20 0.51
TDP1 Q9NUW8 2/20 0.51
PDGFRB P09619 2/20 0.51
PDGFRA P16234 2/20 0.51
HSD17B10 Q99714 1/20 0.47
MAOA P21397 1/20 0.47
MAOB P27338 1/20 0.47
PRKDC P78527 1/20 0.46
OGT O15294 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9610676 0.84 CREBBP (0.56) KMT2ACA9CA12POLBCREBBP
SCHEMBL144518 0.84 CREBBP (0.54) KMT2ACA9CA12POLBCREBBP
SCHEMBL19335545 0.83 CREBBP (0.55) KMT2ACA9CA12POLBCREBBP
SCHEMBL16187161 0.83 CREBBP (0.55) KMT2ACA9CA12POLBCREBBP
SCHEMBL26163257 0.80 CREBBP (0.45) KMT2ACA9CA12POLBCREBBP
SCHEMBL28723832 0.80 CREBBP (0.52) KMT2APOLBCREBBPKDM4EALDH1A1
SCHEMBL9610690 0.80 CREBBP (0.56) KMT2ACA9CA12POLBCREBBP
SCHEMBL18457389 0.80 CREBBP (0.51) KMT2ACA9CA12POLBCREBBP
SCHEMBL19400639 0.79 CREBBP (0.48) KMT2ACA9CA12POLBCREBBP
SCHEMBL14563058 0.77 CREBBP (0.61) KMT2APOLBCREBBPKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 212 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230314944-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-05 US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM KMT2A 1022/4885CA9 2067/4885CA12 766/4885
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, PCNA, PAM KMT2A 1160/4885CA9 1025/4885CA12 580/4885
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS PARG, PCNA, POLH KMT2A 873/4885CA9 1332/4885CA12 1059/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.