SCHEMBL9684130

SCHEMBL9684130

CCc1cc(C(C)(C)C)cc(CC)c1N

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.50
HTT P42858 2/20 0.47
CYP2C19 P33261 2/20 0.41
HTR1D P28221 2/20 0.39
GABRA1 P14867 1/20 0.37
GABRB2 P47870 1/20 0.37
MAPT P10636 3/20 0.36
GAA P10253 2/20 0.36
ESR1 P03372 2/20 0.36
ESR2 Q92731 2/20 0.36
KDM4E B2RXH2 1/20 0.36
HTR1B P28222 1/20 0.35
ALDH1A1 P00352 3/20 0.35
CYP2D6 P10635 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2C9 P11712 1/20 0.35
HIF1A Q16665 1/20 0.35
MEN1 O00255 1/20 0.34
PKM P14618 1/20 0.34
RECQL P46063 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9683683 0.89 POLB (0.61) POLBHTTCYP2C19HTR1DGABRA1
SCHEMBL6518281 0.86 HTT (0.47) POLBHTTGABRA1GABRB2MAPT
SCHEMBL13791752 0.86 POLB (0.42) POLBHTTCYP2C19HTR1DGABRA1
SCHEMBL9683783 0.82 POLB (0.39) POLBHTTCYP2C19ATM
SCHEMBL9447365 0.80 HTT (0.42) POLBHTTGABRA1GABRB2MAPT
SCHEMBL10774635 0.80 POLB (0.51) POLBHTTCYP2C19MAPTGAA
SCHEMBL9617141 0.79 HTT (0.45) POLBHTTMAPTESR1ESR2
SCHEMBL31497055 0.79 POLB (0.43) POLBCYP2C19HTR1DGABRA1GABRB2
SCHEMBL8916205 0.79 POLB (0.48) POLBHTTHTR1DMAPTESR1
SCHEMBL199385 0.78 CYP2C19 (0.42) POLBCYP2C19HTR1DGABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108250341-B Catalyst system containing metallocene compound and method for catalyzing olefin polymerization by using catalyst system 北京引发科技有限公司 2020-12-11 CN disclosed
US-10042258-B2 Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-07 US disclosed
US-10042258-B2 Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-07 US disclosed
US-9977331-B2 Resist overlayer film forming composition and method for producing semiconductor device including the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-05-22 US disclosed
US-9977331-B2 Resist overlayer film forming composition and method for producing semiconductor device including the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-05-22 US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 US disclosed
US-20170010535-A1 RESIST OVERLAYER FILM FORMING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE INCLUDING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-01-12 US disclosed
US-20150362835-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-17 US disclosed
US-20150248057-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-03 US disclosed
US-20150248057-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-03 US disclosed
US-9046768-B2 Resist overlayer film forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-06-02 US disclosed
US-9046768-B2 Resist overlayer film forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-06-02 US disclosed
US-20140255847-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-11 US disclosed
US-20140255847-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-11 US disclosed
EP-0492473-A1 Process for the preparation of 4-substituted 2,6-dialkylanilines LONZA AG (CH) 1992-07-01 EP disclosed
US-4194008-A INSECTICIDE, FUNGICIDE, MITICIDE, PARASITICIDES BAYER AKTIENGESELLSCHAFT (DE) 1980-03-18 US disclosed
EP-0000365-A1 N-aryl-N'-alcoyl-S-alcoyl isothioureas, process for their preparation and their use against animal and vegetal pests BAYER AG (DE) 1979-01-24 EP disclosed