SCHEMBL970937

SCHEMBL970937

CC(=O)CC(=O)C(C(C)=O)(C(C)=O)C(C)=O

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MGAM O43451 1/20 0.39
GAA P10253 1/20 0.39
SI P14410 1/20 0.39
MGAM2 Q2M2H8 1/20 0.39
HTT P42858 1/20 0.36
ALDH1A1 P00352 3/20 0.35
TDP1 Q9NUW8 1/20 0.35
KDM4E B2RXH2 1/20 0.35
KDM6B O15054 1/20 0.35
KDM5C P41229 1/20 0.35
EGLN1 Q9GZT9 1/20 0.35
PHF8 Q9UPP1 1/20 0.35
KDM2A Q9Y2K7 1/20 0.35
TRPA1 O75762 1/20 0.33
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10824229 0.97 MGAM (0.38) MGAMGAASIMGAM2HTT
SCHEMBL6232159 0.97 MGAM (0.38) MGAMGAASIMGAM2HTT
SCHEMBL23581431 0.97 MGAM (0.38) MGAMGAASIMGAM2HTT
SCHEMBL27756979 0.97 MGAM (0.38) MGAMGAASIMGAM2HTT
SCHEMBL28706968 0.87 KDM4E (0.36) MGAMGAASIMGAM2HTT
SCHEMBL2166989 0.85 KDM4E (0.34) MGAMGAASIMGAM2HTT
SCHEMBL2166976 0.83 MGAM (0.32) MGAMGAASIMGAM2HTT
SCHEMBL27798213 0.81 ALDH1A1 (0.43) MGAMGAASIMGAM2HTT
SCHEMBL28706965 0.80 LDHA (0.42) KDM4EKDM6BKDM5CEGLN1PHF8
SCHEMBL2166990 0.76 CA4 (0.43)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4220342-A Gasket having polysiloxane sealant layer containing organotitanate DANA CORPORATION (US) 1980-09-02 US claimed
CN-114426842-B MoS (MoS)2Fluorescent quantum dot of@organic polymer shell structure and preparation method thereof 上海大学 2024-05-14 CN disclosed
CN-103889591-A Method for producing article with low reflection film ASAHI GLASS CO LTD 2014-06-25 CN disclosed
US-7871883-B2 Method of manufacturing semiconductor device includes the step of depositing the capacitor insulating film in a form of a hafnium silicate SONY CORPORATION (JP) 2011-01-18 US disclosed
US-20070066010-A1 Method of manufacturing semiconductor device SONY CORPORATION (JP) 2007-03-22 US disclosed