SCHEMBL9745747

SCHEMBL9745747

C=C(CF)C(=O)OC(C)C

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.39
XPO1 O14980 3/20 0.37
ADRA1A P35348 1/20 0.35
PDE4D Q08499 1/20 0.35
LMNA P02545 2/20 0.32
HCAR2 Q8TDS4 1/20 0.31
GAA P10253 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26129905 0.79 TSHR (0.40) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL640114 0.79 TSHR (0.40) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL666917 0.79 TSHR (0.40) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL9747340 0.78 TSHR (0.36) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL9745606 0.77 TSHR (0.39) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL9244632 0.77 TSHR (0.39) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL9746345 0.77 TSHR (0.39) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL2065900 0.77 TSHR (0.39) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL1520934 0.77 TSHR (0.39) TSHRXPO1ADRA1APDE4DLMNA
SCHEMBL3476792 0.76 LMNA (0.44) TSHRXPO1ADRA1APDE4DLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103154042-B Photoetching technique multipolymer and manufacture method thereof, anti-corrosion agent composition, forms the manufacture method of the substrate of pattern, the evaluation method of multipolymer, multipolymer composition analytic method MITSUBISHI RAYON CO.,LTD. (JP) 2015-12-16 CN disclosed
CN-103154042-A Copolymers for lithography and method for producing same, resist composition, method for producing substrate with pattern formed thereupon, method for evaluating copolymers, and method for analyzing copolymer compositions MITSUBISHI RAYON CO 2013-06-12 CN disclosed
CN-102753476-A Carbon nanotube sheet and process for production thereof UNIV HOKKAIDO NAT UNIV CORP 2012-10-24 CN disclosed
CN-102712561-A Bicyclohexane derivative compound and process for producing the same MITSUBISHI GAS CHEMICAL CO 2012-10-03 CN disclosed
CN-101823989-B Polymer for resist, resist composition, pattern forming method and material compound for resist polymer MITSUBISHI RAYON CO 2012-05-09 CN disclosed
CN-102341366-A Adamantane derivative, method for producing same, polymer using same as starting material, and resin composition MITSUBISHI GAS CHEMICAL CO 2012-02-01 CN disclosed
CN-1930194-B Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO 2011-03-30 CN disclosed
CN-101823989-A Resist with polymkeric substance, resist composition and method of manufacturing pattern and resist with the polymkeric substance starting compound MITSUBISHI RAYON CO 2010-09-08 CN disclosed
CN-1976962-B Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO 2010-06-23 CN disclosed
CN-1976962-A Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO (JP) 2007-06-06 CN disclosed
CN-1930194-A Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO (JP) 2007-03-14 CN disclosed
US-5100762-A Radiation-sensitive polymer and radiation-sensitive composition containing the same MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1992-03-31 US disclosed