SCHEMBL975383

SCHEMBL975383

CCN(CC)Cn1nnc2c(C)cccc21

nearest known ligand 0.46

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
GRM2 Q14416 15/20 0.46
SLC9A1 P19634 2/20 0.37
TLR8 Q9NR97 1/20 0.35
NPC1 O15118 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10956553 0.84 GRM2 (0.45) GRM2NPC1
SCHEMBL974069 0.84 GRM2 (0.40) GRM2NPC1
SCHEMBL17728249 0.83 GRM2 (0.46) GRM2SLC9A1TLR8
SCHEMBL30627901 0.83 GRM2 (0.46) GRM2SLC9A1TLR8
SCHEMBL6241554 0.83 GRM2 (0.46) GRM2SLC9A1TLR8
SCHEMBL19700841 0.83 GRM2 (0.41) GRM2SLC9A1TLR8NPC1
SCHEMBL17828279 0.82 GRM2 (0.67) GRM2SLC9A1TLR8NPC1
SCHEMBL974763 0.80 GRM2 (0.46) GRM2NPC1
SCHEMBL19911457 0.79 GRM2 (0.69) GRM2SLC9A1TLR8NPC1
SCHEMBL4233106 0.78 GRM2 (0.49) GRM2SLC9A1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 97 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4700821-A1 TREATMENT SOLUTION AND METHOD FOR TREATING OBJECT TO BE TREATED FUJIFILM Corporation (JP) 2026-02-25 EP disclosed
US-20260028558-A1 TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED FUJIFILM CORP (JP) 2026-01-29 US disclosed
US-20250377594-A1 RESIST COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-12-11 US disclosed
US-12481218-B2 Treatment liquid, method for washing substrate, and method for removing resist FUJIFILM CORPORATION (JP) 2025-11-25 US disclosed
US-20250321482-A1 RESIST COMPOSITION, DRY FILM RESIST, METHOD FOR PRODUCING DRY FILM RESIST, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING PLATED OBJECT SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-10-16 US disclosed
US-12441965-B2 Treatment liquid and substrate washing method FUJIFILM CORPORATION (JP) 2025-10-14 US disclosed
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-09-04 US disclosed
US-20250231484-A1 RESIST COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-07-17 US disclosed
US-20250197783-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-06-19 US disclosed
US-12275921-B2 Treatment liquid and substrate treatment method FUJIFILM CORPORATION (JP) 2025-04-15 US disclosed
US-20060014110-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA 2006-01-19 US disclosed
US-20050187118-A1 Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-25 US disclosed
US-20050176259-A1 Method for removing photoresist TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-11 US disclosed
EP-1550912-A1 METHOD FOR REMOVING PHOTORESIST TOKYO OHKA KOGYO CO., LTD. (JP) 2005-07-06 EP disclosed
US-20050019688-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA (JP) 2005-01-27 US disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6638899-B1 Solution which comprises salt of hydrofluoric acid with base free from metal ions, water soluble organic solvent, basic substance and water, and which has pH value of from 8.5 to 10.0 TOKYO OHKA KOGYO CO., LTD. (JP) 2003-10-28 US disclosed
US-20030138737-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-07-24 US disclosed
US-20030134234-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA (JP) 2003-07-17 US disclosed
US-20010021489-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2001-09-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260028558-A1 TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED AOC1, EPCAM, AOC2 GRM2 2990/4885SLC9A1 347/4885TLR8 1259/4885
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ABCC1, SLC11A2, RER1 GRM2 342/4885SLC9A1 2203/4885TLR8 3083/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.