SCHEMBL976855

SCHEMBL976855

Nc1ccccc1SCC(O)CS

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 4/20 0.52
KMT2A Q03164 4/20 0.52
POLB P06746 1/20 0.44
MAPT P10636 4/20 0.43
NPSR1 Q6W5P4 3/20 0.43
APOBEC3G Q9HC16 2/20 0.43
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
CA4 P22748 1/20 0.39
CA7 P43166 1/20 0.39
CA9 Q16790 1/20 0.39
HSD17B10 Q99714 1/20 0.39
BACE1 P56817 3/20 0.38
MAOA P21397 1/20 0.36
MAOB P27338 1/20 0.36
MAPK1 P28482 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
NPC1 O15118 1/20 0.36
TP53 P04637 1/20 0.36
RAB9A P51151 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30832932 1.00 MEN1 (0.52) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL5835220 0.83 MEN1 (0.54) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL11096023 0.81 MEN1 (0.52) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL11097583 0.79 MEN1 (0.50) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL11097562 0.77 KMT2A (0.48) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL29180223 0.76 CPA3 (0.49) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL11592728 0.75 HSD17B10 (0.48) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL14565233 0.75 MAOA (0.48) MAPTCA1CA2CA4CA7
SCHEMBL11101018 0.74 POLB (0.48) MEN1KMT2APOLBMAPTNPSR1
SCHEMBL29280293 0.73 MEN1 (0.45) MEN1KMT2APOLBMAPTNPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8192923-B2 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-05 US claimed
EP-1775339-B1 Aqueous cleaning composition and method for using same AIR PROD & CHEM (US) 2011-11-16 EP claimed
US-20110264943-A1 STORAGE CONTROL DEVICE HITACHI, LTD. (JP) 2011-10-27 US claimed
US-20080011714-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2008-01-17 US claimed
US-20070105035-A1 Photoresist stripping solution and method of treating substrate with the same YOKOI SHIGERU 2007-05-10 US claimed
US-20070037087-A1 salt of hydrofluoric acid with a non-metal base, a water-soluble organic solvent, a mercapto group containing corrosion inhibitor, and water; protects aluminum and copper wiring from corrosion while stripping photoresist films and post-ashing residues; nonprecipitating corrosion inhibitor YOKOI SHIGERU 2007-02-15 US claimed
US-20060063688-A1 Photoresist stripping solution and method of treating substrate with the same TOKYO OHKA KOGYO CO., LTD. (JP) 2006-03-23 US claimed
US-20050084792-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU (JP) 2005-04-21 US claimed
US-20030114014-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-06-19 US claimed
US-20250270480-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR TOKYO OHKA KOGYO CO., LTD. (JP) 2025-08-28 US disclosed
US-20250270474-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR TOKYO OHKA KOGYO CO., LTD. (JP) 2025-08-28 US disclosed
US-20250197783-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-06-19 US disclosed
US-20240425780-A1 CLEANING SOLUTION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR TOKYO OHKA KOGYO CO., LTD. (JP) 2024-12-26 US disclosed
US-20240117280-A1 METAL RESIDUE REMOVING LIQUID, METAL RESIDUE REMOVING METHOD, AND METAL WIRING MANUFACTURING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2024-04-11 US disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
CN-1495535-A Etching solution for forming bimetallic mosaic structure craft and base phate treatment method ͬ�Ϳ�ҵ��ʽ���� 2004-05-12 CN disclosed
US-20030138737-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-07-24 US disclosed
CN-1428659-A Stripping liquid for photoresist and photoresist stripping method using said stripping liguid TOKYO APPLIED CHEMICAL INDUSTR (JP) 2003-07-09 CN disclosed
US-20030114014-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-06-19 US disclosed