SCHEMBL98602

SCHEMBL98602

COC(=O)C1C2OC3C(OS(=O)(=O)C31)C2C

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
PPM1B O75688 1/20 0.33
PTPN1 P18031 1/20 0.33
PPP1CC P36873 1/20 0.33
CYP2C19 P33261 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15856535 0.84 CYP2C19 (0.35) PPM1BPTPN1PPP1CCCYP2C19
SCHEMBL21972587 0.83 PPM1B (0.33) PPM1BPTPN1PPP1CC
SCHEMBL12764658 0.75 ALDH1A1 (0.32)
SCHEMBL98489 0.73
SCHEMBL14134162 0.72 PPM1B (0.35) PPM1BPTPN1PPP1CCCYP2C19
SCHEMBL98367 0.72 PPM1B (0.32) PPM1BPTPN1PPP1CCCYP2C19
SCHEMBL15849889 0.71
SCHEMBL18845192 0.71
SCHEMBL18721337 0.70 PPM1B (0.39) PPM1BPTPN1PPP1CC
SCHEMBL15463194 0.69 ALDH1A1 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 543 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20100086873-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-08 US disclosed
US-7682772-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-23 US disclosed
US-7682772-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-23 US disclosed
US-20100062369-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-20100062369-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-20100062364-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-20100062364-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-20090226842-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-09-10 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 PPM1B 4809/4885PTPN1 4656/4885PPP1CC 4645/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 PPM1B 1391/4885PTPN1 1705/4885PPP1CC 4049/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.