SCHEMBL9908346

SCHEMBL9908346

COC(=O)C1(C(F)(F)F)CC2CCC1C2

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.34
ALDH1A1 P00352 2/20 0.31
HTT P42858 1/20 0.31
SLC6A4 P31645 1/20 0.31
SLC6A3 Q01959 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9908332 0.90 HSD11B1 (0.30) HSD11B1
SCHEMBL12009286 0.84 CHRM2 (0.33) HSD11B1ALDH1A1HTT
SCHEMBL20097868 0.81 HSD11B1 (0.36) HSD11B1ALDH1A1HTT
SCHEMBL12928183 0.81 CYP17A1 (0.35) HSD11B1
SCHEMBL13758545 0.80 HSD11B1 (0.40) HSD11B1
SCHEMBL12009282 0.79 ALDH1A1 (0.32) ALDH1A1HTT
SCHEMBL12009844 0.79 EPHX2 (0.36) HSD11B1ALDH1A1HTT
SCHEMBL12968046 0.77 HSD11B1 (0.31) HSD11B1
SCHEMBL9908328 0.75 HSD11B1 (0.33) HSD11B1ALDH1A1HTTSLC6A4SLC6A3
SCHEMBL4740020 0.73 ALDH1A1 (0.33) HSD11B1ALDH1A1HTTL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed