Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13829324 | 0.92 | MEN1 (0.35) | ALDH1A1MEN1KMT2AL3MBTL1 | |
| SCHEMBL9924497 | 0.92 | ALDH1A1 (0.33) | ALDH1A1MEN1KMT2AL3MBTL1THRB | |
| SCHEMBL12346467 | 0.87 | ALDH1A1 (0.33) | ALDH1A1MEN1KMT2AL3MBTL1 | |
| SCHEMBL9924481 | 0.87 | ALDH1A1 (0.41) | ALDH1A1MEN1KMT2AL3MBTL1THRB | |
| SCHEMBL18845367 | 0.86 | ALDH1A1 (0.35) | ALDH1A1MEN1KMT2AL3MBTL1 | |
| SCHEMBL9924502 | 0.85 | CYP4F2 (0.31) | — | |
| SCHEMBL685211 | 0.84 | ALDH1A1 (0.34) | ALDH1A1MEN1KMT2AL3MBTL1THRB | |
| SCHEMBL9924498 | 0.84 | ALDH1A1 (0.37) | ALDH1A1MEN1KMT2AL3MBTL1THRB | |
| SCHEMBL685821 | 0.84 | ALDH1A1 (0.34) | ALDH1A1MEN1KMT2AL3MBTL1THRB | |
| SCHEMBL12405244 | 0.84 | ALDH1A1 (0.33) | ALDH1A1MEN1KMT2AL3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-13 | — | — | US | disclosed |
| US-7985528-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-26 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | FUJIFILM CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-7790351-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2010-09-07 | — | — | US | disclosed |
| US-7790351-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2010-09-07 | — | — | US | disclosed |
| US-20100136485-A1 | ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100062366-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20090136870-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090136870-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | ARFGAP1, FRG1, RHOA | ALDH1A1 659/4885MEN1 599/4885KMT2A 485/4885 |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | ALDH1A1 1697/4885MEN1 229/4885KMT2A 122/4885 |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | ALDH1A1 629/4885MEN1 415/4885KMT2A 105/4885 |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, RAD1, POLR1A | ALDH1A1 1131/4885MEN1 157/4885KMT2A 359/4885 |
| US-20100136485-A1 | ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS | C9, ARF1, C1R | ALDH1A1 1502/4885MEN1 344/4885KMT2A 496/4885 |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | ALDH1A1 2580/4885MEN1 531/4885KMT2A 72/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.