SCHEMBL9925210

SCHEMBL9925210

CCC(C)(C)C(=O)OC12CC3CC(CC(OC(N)=O)(C3)C1)C2

nearest known ligand 0.37

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.34
CYP19A1 P11511 1/20 0.34
DPP8 Q6V1X1 2/20 0.34
DPP9 Q86TI2 2/20 0.34
PKM P14618 1/20 0.33
DPP4 P27487 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9925221 0.93 CYP17A1 (0.32) CYP17A1CYP19A1
SCHEMBL13563627 0.87 CYP17A1 (0.35) CYP17A1CYP19A1DPP8DPP9DPP4
SCHEMBL15905714 0.87 CYP17A1 (0.35) CYP17A1CYP19A1DPP8DPP9DPP4
SCHEMBL14802697 0.87 CYP17A1 (0.35) CYP17A1CYP19A1DPP8DPP9DPP4
SCHEMBL2625704 0.87 DPP4 (0.40) CYP17A1CYP19A1DPP8DPP9DPP4
SCHEMBL14997662 0.87 DPP8 (0.32) CYP17A1CYP19A1DPP8DPP9PKM
SCHEMBL14330864 0.86 DPP8 (0.33) CYP17A1CYP19A1DPP8DPP9DPP4
SCHEMBL14295491 0.86 PKM (0.37) CYP17A1CYP19A1DPP8DPP9PKM
SCHEMBL16020226 0.86 GRIN2D (0.41) CYP17A1CYP19A1DPP8DPP9PKM
SCHEMBL2607818 0.86 CYP17A1 (0.34) CYP17A1CYP19A1DPP8DPP9DPP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-11-19 US disclosed
US-9170487-B2 Resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-10-27 US disclosed
US-9164380-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-10-20 US disclosed
US-9133102-B2 Resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-09-15 US disclosed
US-9097971-B2 Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-04 US disclosed
US-9063416-B2 Resist composition, method of forming resist pattern and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-23 US disclosed
US-20150111154-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-04-23 US disclosed
US-8987386-B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-24 US disclosed
US-8956801-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-17 US disclosed
US-8883396-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-11-11 US disclosed
US-20130157197-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130137048-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed
US-20130095427-A1 RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-18 US disclosed
US-20130071789-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-21 US disclosed
US-20130045443-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-21 US disclosed
US-20130022911-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-24 US disclosed
US-20120328993-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120148953-A1 Resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND C1R, SLC11A2, C9 CYP17A1 1083/4885CYP19A1 1013/4885DPP8 4874/4885
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE RER1, CROCC, RFT1 CYP17A1 3061/4885CYP19A1 2068/4885DPP8 4843/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.