Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 6/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | USP2 | O75604 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.31 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.31 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.31 |
| ▸ | PGR | P06401 | 1/20 | 0.31 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.31 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.31 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.31 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.31 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.31 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.31 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.31 |
| ▸ | DRD1 | P21728 | 1/20 | 0.31 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2754976 | 0.90 | HMGCR (0.34) | HMGCRALDH1A1CYP3A4KDM4EUSP2 | |
| SCHEMBL17563384 | 0.90 | — | — | |
| SCHEMBL19335846 | 0.89 | — | — | |
| SCHEMBL10178832 | 0.88 | HMGCR (0.35) | HMGCRALDH1A1CYP3A4KDM4EUSP2 | |
| SCHEMBL17552587 | 0.86 | HMGCR (0.33) | HMGCR | |
| SCHEMBL18802881 | 0.85 | HMGCR (0.35) | HMGCRALDH1A1CYP3A4KDM4EUSP2 | |
| SCHEMBL16591103 | 0.85 | HMGCR (0.32) | HMGCR | |
| SCHEMBL18802891 | 0.85 | HMGCR (0.35) | HMGCRALDH1A1CYP3A4KDM4EUSP2 | |
| SCHEMBL9973320 | 0.85 | HMGCR (0.32) | HMGCRALDH1A1CYP3A4KDM4EUSP2 | |
| SCHEMBL15681904 | 0.84 | HMGCR (0.33) | HMGCRALDH1A1CYP3A4KDM4EUSP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-9448482-B2 | Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-23 | — | — | US | disclosed |
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-23 | — | — | US | disclosed |
| US-20160131976-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160070174-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-03-10 | — | — | US | disclosed |
| US-20150253673-A1 | PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-8999621-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-20120148957-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1C, ADH1A, ADH5 | HMGCR 2225/4885ALDH1A1 257/4885CYP3A4 2415/4885 |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, RAD1, POLR1A | HMGCR 1658/4885ALDH1A1 1131/4885CYP3A4 4337/4885 |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | HMGCR 3869/4885ALDH1A1 2580/4885CYP3A4 3381/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.