SCHEMBL9946541

SCHEMBL9946541

C=Cc1ccc2c(c1)C(=O)c1ccc(O)cc1C2=O

nearest known ligand 0.67

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR2 Q92731 8/20 0.67
ESR1 P03372 7/20 0.67
MAOA P21397 3/20 0.67
MAOB P27338 3/20 0.67
UGT1A1 P22309 1/20 0.67
TTR P02766 1/20 0.50
BCL2 P10415 1/20 0.43
MCL1 Q07820 1/20 0.43
CSNK2A2 P19784 1/20 0.43
CSNK2B P67870 1/20 0.43
CSNK2A1 P68400 1/20 0.43
CSNK2A3 Q8NEV1 1/20 0.43
CES2 O00748 1/20 0.41
TYR P14679 1/20 0.41
CYP26A1 O43174 1/20 0.41
MIF P14174 1/20 0.41
MEN1 O00255 1/20 0.41
NPC1 O15118 1/20 0.41
ALDH1A1 P00352 1/20 0.41
GAA P10253 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6385626 0.82 NPC1 (0.50) MAOATTRBCL2MCL1CES2
Anthraflavicacid SCHEMBL124974 0.82 ESR2 (1.00) ESR2ESR1MAOAMAOBUGT1A1
Anthraflavicacid SCHEMBL29985684 0.82 ESR2 (1.00) ESR2ESR1MAOAMAOBUGT1A1
SCHEMBL2772476 0.82 ESR2 (1.00) ESR2ESR1MAOAMAOBUGT1A1
Anthraflavicacid SCHEMBL31105422 0.82 ESR2 (1.00) ESR2ESR1MAOAMAOBUGT1A1
SCHEMBL19655043 0.81 BCL2 (0.56) ESR2ESR1MAOAMAOBUGT1A1
SCHEMBL9100646 0.81 NPC1 (0.48) MAOATTRBCL2MCL1CES2
Anthraflavicacid SCHEMBL28758924 0.80 ESR2 (0.95) ESR2ESR1MAOAMAOBUGT1A1
SCHEMBL19655042 0.78 S100A4 (0.55) ESR2ESR1MAOAMAOBUGT1A1
SCHEMBL19655041 0.78 ALDH1A1 (0.40) ESR2ESR1MAOAMAOBUGT1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10377842-B2 Polymer, negative resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-13 US disclosed
US-10191372-B2 Polymer, positive resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-20170355795-A1 POLYMER, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-14 US disclosed
US-20170355795-A1 POLYMER, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-14 US disclosed
US-20170343898-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-30 US disclosed
US-20170343898-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-30 US disclosed
EP-2463323-A2 POLYARYLENE ETHER POLYMER WHICH IS BOTH TRANSPARENT AND RESISTANT TO HIGH-TEMPERATURE HEAT, AND METHOD FOR PREPARING SAME IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) (KR) 2012-06-13 EP disclosed