Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.38 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | PRKCA | P17252 | 1/20 | 0.37 |
| ▸ | PKM | P14618 | 1/20 | 0.36 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.36 |
| ▸ | ATM | Q13315 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14241050 | 0.99 | ALDH1A1 (0.37) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL19459382 | 0.99 | ALDH1A1 (0.37) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL8894707 | 0.91 | ALDH1A1 (0.40) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL14648929 | 0.90 | EPHX2 (0.33) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL4273109 | 0.90 | ALDH1A1 (0.40) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL14240907 | 0.89 | ALDH1A1 (0.37) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL12556616 | 0.89 | ALDH1A1 (0.39) | ALDH1A1KMT2ANPSR1MEN1MAPT | |
| SCHEMBL14648972 | 0.88 | ALDH1A1 (0.44) | ALDH1A1NPSR1GAASMN1; SMN2 | |
| SCHEMBL14648949 | 0.88 | NPSR1 (0.43) | ALDH1A1KMT2ANPSR1MEN1PKM | |
| SCHEMBL14648938 | 0.88 | NPSR1 (0.45) | ALDH1A1KMT2ANPSR1MEN1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 126 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11796912-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-11796912-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-20230314943-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2023-10-05 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230213861-A1 | METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-07-06 | — | — | US | disclosed |
| US-20230205082-A9 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230205082-A9 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11687003-B2 | Negative resist pattern-forming method, and composition for upper layer film formation | JSR CORPORATION (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687003-B2 | Negative resist pattern-forming method, and composition for upper layer film formation | JSR CORPORATION (JP) | 2023-06-27 | — | — | US | disclosed |
| EP-2485090-A1 | Radiation-sensitive resin composition for forming resist pattern | JSR Corporation (JP) | 2012-08-08 | — | — | EP | disclosed |
| WO-2012049919-A1 | METHOD FOR FORMING RESIST PATTERN AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR株式会社 (JP) | 2012-04-19 | — | — | WO | disclosed |
| WO-2011145703-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | JSR株式会社 (JP) | 2011-11-24 | — | — | WO | disclosed |
| WO-2011145702-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | JSR株式会社 (JP) | 2011-11-24 | — | — | WO | disclosed |
| US-20110143279-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2011-06-16 | — | — | US | disclosed |
| EP-2325694-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR Corporation (JP) | 2011-05-25 | — | — | EP | disclosed |
| US-20110112306-A1 | Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt | CENTRAL GLASS COMPANY, LIMITED (JP) | 2011-05-12 | — | — | US | disclosed |
| WO-2011037246-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER | JSR株式会社 (JP) | 2011-03-31 | — | — | WO | disclosed |
| WO-2010029982-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR株式会社 (JP) | 2010-03-18 | — | — | WO | disclosed |
| WO-2010007910-A1 | NOVEL SULFONIC ACID SALT AND DERIVATIVE THEREOF, PHOTO-ACID GENERATOR, AND PROCESS FOR PRODUCTION OF SULFONIC ACID SALT | セントラル硝子株式会社 (JP) | 2010-01-21 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110112306-A1 | Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt | ASIC1, FGFR1, PFAS | ALDH1A1 1719/4885KMT2A 910/4885NPSR1 825/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.