SCHEMBL9999899

SCHEMBL9999899

COCN1C(=O)N(COC)C2C1N(CCO)C(=O)N2CCO

nearest known ligand 0.42

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.42
TP53 P04637 1/20 0.33
GAA P10253 1/20 0.33
KDM4E B2RXH2 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C9 P11712 1/20 0.30
FPR1 P21462 1/20 0.30
CYP2C19 P33261 1/20 0.30
ADRA2C P18825 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6124091 1.00 L3MBTL1 (0.42) L3MBTL1TP53GAAKDM4ECYP1A2
SCHEMBL15033912 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL12368490 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL17807665 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL16284292 0.93 TP53 (0.44) L3MBTL1TP53GAAADRA2C
SCHEMBL15429213 0.89 TP53 (0.47) L3MBTL1TP53GAAADRA2C
SCHEMBL75394 0.85 L3MBTL1 (0.43) L3MBTL1TP53GAAADRA2C
SCHEMBL17877052 0.84 L3MBTL1 (0.31) L3MBTL1
SCHEMBL21414069 0.84 L3MBTL1 (0.61) L3MBTL1
SCHEMBL18106281 0.83 L3MBTL1 (0.50) L3MBTL1TP53GAAKDM4EADRA2C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10042258-B2 Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-07 US disclosed
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-9910005-B2 Biosensor STMICROELECTRONICS S.R.L. (IT) 2018-03-06 US disclosed
US-20170351176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9823210-B2 Method of manufacturing a biosensor STMICROELECTRONICS S.R.L. (IT) 2017-11-21 US disclosed
US-9746772-B2 Resist underlayer film forming composition for lithography containing polyether structure-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 US disclosed
US-9696626-B2 Composition for forming a resist underlayer film, and pattern-forming method JSR CORPORATION (JP) 2017-07-04 US disclosed
US-20120292487-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR PRODUCING MICROLENS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-11-22 US disclosed
US-20120181251-A1 PATTERN FORMING METHOD AND RESIST UNDERLAYER FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20120052449-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-01 US disclosed
US-20120007200-A1 Image Sensor and Method for Manufacturing the Same CHEIL INDUSTRIES INC. (KR) 2012-01-12 US disclosed
US-20110287234-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2011-11-24 US disclosed
US-20110260114-A1 SEMICONDUCTING COMPOSITION XEROX CORPORATION (US) 2011-10-27 US disclosed
US-20110086310-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR PRODUCTION OF MICROLENS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-04-14 US disclosed
US-20080305431-A1 PRETREATMENT COMPOSITIONS FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2008-12-11 US disclosed
US-7407731-B2 of photosensitive polybenzoxazole (PBO) precursors, a mercapto compound of given formula such as 2-mercaptobenzoxazole to inhibit residue from forming, a photosensitive agent, a photoactive compound and solvent; electronics, relief images FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-05 US disclosed
US-7399572-B2 Pretreatment compositions FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-07-15 US disclosed