SCHEMBL6124091

SCHEMBL6124091

COCN1C(=O)N(CCO)C2C1N(COC)C(=O)N2CCO

nearest known ligand 0.42

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.42
TP53 P04637 1/20 0.33
GAA P10253 1/20 0.33
KDM4E B2RXH2 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C9 P11712 1/20 0.30
FPR1 P21462 1/20 0.30
CYP2C19 P33261 1/20 0.30
ADRA2C P18825 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9999899 1.00 L3MBTL1 (0.42) L3MBTL1TP53GAAKDM4ECYP1A2
SCHEMBL15033912 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL12368490 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL17807665 0.93 L3MBTL1 (0.55) L3MBTL1TP53GAA
SCHEMBL16284292 0.93 TP53 (0.44) L3MBTL1TP53GAAADRA2C
SCHEMBL15429213 0.89 TP53 (0.47) L3MBTL1TP53GAAADRA2C
SCHEMBL75394 0.85 L3MBTL1 (0.43) L3MBTL1TP53GAAADRA2C
SCHEMBL17877052 0.84 L3MBTL1 (0.31) L3MBTL1
SCHEMBL21414069 0.84 L3MBTL1 (0.61) L3MBTL1
SCHEMBL18106281 0.83 L3MBTL1 (0.50) L3MBTL1TP53GAAKDM4EADRA2C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 119 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914296-B2 Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating MERCK PATENT GMBH (DE) 2024-02-27 US disclosed
US-20230350305-A1 MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230341778-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2023-10-26 US disclosed
US-11767398-B2 Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life MERCK PATENT GMBH (DE) 2023-09-26 US disclosed
US-11640111-B2 Photosensitive resin composition and cured film comprising the same LG CHEM, LTD. (KR) 2023-05-02 US disclosed
US-11640110-B2 Resin composition, method for producing heat-resistant resin film, and display device TORAY INDUSTRIES, INC. (JP) 2023-05-02 US disclosed
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting TOKYO ELECTRON LIMITED (JP) 2018-07-17 US disclosed
US-10007183-B2 Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9977330-B2 Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-22 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20120115084-A1 CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION DAI NIPPON PRINTING CO., LTD. (JP) 2012-05-10 US disclosed
US-20120107563-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN, MEMS STRUCTURE, METHOD FOR PRODUCING THE STRUCTURE, METHOD FOR DRY ETCHING, METHOD FOR WET ETCHING, MEMS SHUTTER DEVICE, AND IMAGE DISPLAY APPARATUS FUJIFILM CORPORATION (JP) 2012-05-03 US disclosed
US-20110284855-A1 RESIN COMPOSITION AND DISPLAY DEVICE USING THE SAME TORAY INDUSTRIES, INC. (JP) 2011-11-24 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
US-20110177453-A1 Fluorine-Containing Sulfonates Having Polymerizable Anions and Manufacturing Method Therefor, Fluorine-Containing Resins, Resist Compositions, and Pattern-Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-07-21 US disclosed
US-20110177459-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110171436-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2011-07-14 US disclosed
US-20110143103-A1 PHOTO-CURABLE RESIN COMPOSITION, PATTERN FORMING METHOD AND SUBSTRATE PROTECTING FILM, AND FILM-SHAPED ADHESIVE AND ADHESIVE SHEET USING SAID COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-16 US disclosed
US-20110042653-A1 Near-Infrared Absorbing Film Compositions INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-02-24 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120115084-A1 CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION SEM1, ELL, POLL L3MBTL1 4781/4885TP53 3312/4885GAA 3931/4885
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting ASIC1, ASIC3, CLTA L3MBTL1 3448/4885TP53 2643/4885GAA 863/4885
US-20110177453-A1 Fluorine-Containing Sulfonates Having Polymerizable Anions and Manufacturing Method Therefor, Fluorine-Containing Resins, Resist Compositions, and Pattern-Forming Method Using Same WASF2, EEF2, IKZF2 L3MBTL1 1705/4885TP53 3149/4885GAA 2989/4885
US-10007183-B2 Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process OR10J3, RER1, OLA1 L3MBTL1 1181/4885TP53 3605/4885GAA 4681/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.