SCHEMBL10029326

SCHEMBL10029326

C=C(C)C(=O)OCNS(=O)(=O)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.39
ALDH1A1 P00352 2/20 0.38
THRB P10828 1/20 0.37
EPHX1 P07099 1/20 0.36
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
MAPK1 P28482 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10063505 0.90 TSHR (0.37) TSHRALDH1A1THRBCA1CA2
SCHEMBL217339 0.83 THRB (0.42) TSHRALDH1A1THRBEPHX1CA1
SCHEMBL775568 0.81 TSHR (0.46) TSHRALDH1A1THRBEPHX1CA1
SCHEMBL13466319 0.80 TSHR (0.34) TSHRALDH1A1THRBEPHX1
SCHEMBL14748511 0.78 TSHR (0.44) TSHRALDH1A1THRB
SCHEMBL13451531 0.77 THRB (0.37) TSHRALDH1A1THRBEPHX1
SCHEMBL13451528 0.77 EPHX1 (0.36) TSHRALDH1A1THRBEPHX1
SCHEMBL19796150 0.77 TSHR (0.37) TSHRALDH1A1THRB
SCHEMBL775729 0.77 TSHR (0.37) TSHRALDH1A1THRBCA1CA2
SCHEMBL10234622 0.77 TSHR (0.37) TSHRALDH1A1THRBCA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-20170029547-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-02 US disclosed
US-20170029547-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-02 US disclosed
US-9310683-B2 Monomer, polymer, positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-9310683-B2 Monomer, polymer, positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-9250523-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9250523-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130059252-A1 METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM JSR CORPORATION (JP) 2013-03-07 US disclosed
US-20130029269-A1 POSITIVE RESIST COMPOSITION AND PATTTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
EP-2444845-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2012-04-25 EP disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed