SCHEMBL217339

SCHEMBL217339

C=C(C)C(=O)OCCNS(=O)(=O)C(F)(F)F

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.42
TSHR P16473 3/20 0.41
EPHX1 P07099 1/20 0.41
ALDH1A1 P00352 2/20 0.35
POLB P06746 1/20 0.33
APEX1 P27695 1/20 0.33
HTT P42858 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CA1 P00915 3/20 0.32
CA2 P00918 3/20 0.32
MAPK1 P28482 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
IDO1 P14902 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL775568 0.91 TSHR (0.46) THRBTSHREPHX1ALDH1A1POLB
SCHEMBL15681507 0.87 EPHX1 (0.43) EPHX1CA1CA2MAPK1SMN1; SMN2
SCHEMBL10053107 0.85 EPHX1 (0.42) EPHX1CA1CA2IDO1
SCHEMBL16866880 0.85 THRB (0.38) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL2632780 0.85 CA1 (0.40) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL10029328 0.84 EPHX1 (0.38) EPHX1CA1CA2IDO1
SCHEMBL10212543 0.84 CA1 (0.46) THRBTSHRALDH1A1CA1CA2
SCHEMBL10029326 0.83 TSHR (0.39) THRBTSHREPHX1ALDH1A1CA1
SCHEMBL13263775 0.83 EPHX1 (0.38) EPHX1CA1CA2
SCHEMBL9946240 0.83 EPHX1 (0.46) TSHREPHX1ALDH1A1CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 609 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
CN-117452768-A Composition for immersion photoresist top coating 徐州博康信息化学品有限公司 2024-01-26 CN disclosed
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
WO-2007039346-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-04-12 WO disclosed
US-7115771-B2 Process for producing fluorine-containing alkylsulfonylaminoethyl α-substituted acrylate CENTRAL GLASS COMPANY, LIMITED (JP) 2006-10-03 US disclosed
US-20050266354-A1 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-12-01 US disclosed
US-20050240052-A1 Process for producing fluorine-containing alkylsulfonylaminoethyl a-substitued acrylate CENTRAL GLASS COMPANY, LIMITED (JP) 2005-10-27 US disclosed
US-6177228-B1 COMPRISING A RADIATION-SENSITIVE ACID GENERATOR AND A POLYMER COMPRISING THE REACTION PRODUCT OF A MONOMER SELECTED FROM METHACRYLATE OR ACRYLATE HAVING A PHOTOACID CLEAVABLE ESTER SUBSTITUENT AND AN UNSATURATED ESTER MONOMER INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-01-23 US disclosed
US-6165678-A Lithographic photoresist composition and process for its use in the manufacture of integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2000-12-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME CRY1, CCNT1, CCNA1 THRB 3729/4885TSHR 3135/4885EPHX1 3553/4885
US-20050240052-A1 Process for producing fluorine-containing alkylsulfonylaminoethyl a-substitued acrylate PFAS, AFF2, AFF1 THRB 989/4885TSHR 506/4885EPHX1 3679/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 THRB 4383/4885TSHR 3355/4885EPHX1 4516/4885
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS C1S, C1R, CRY2 THRB 2348/4885TSHR 839/4885EPHX1 1998/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.