SCHEMBL775729

SCHEMBL775729

C=C(C)C(=O)OCC(C)(C)NS(=O)(=O)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.37
ALDH1A1 P00352 2/20 0.35
THRB P10828 1/20 0.35
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
MAPK1 P28482 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2632786 0.91 TSHR (0.35) TSHRALDH1A1THRB
SCHEMBL20100448 0.87 CA1 (0.31) CA1CA2
SCHEMBL13467163 0.86 TSHR (0.34) TSHRALDH1A1THRB
SCHEMBL13466318 0.86 THRB (0.39) TSHRALDH1A1THRB
SCHEMBL13451535 0.85 THRB (0.35) TSHRALDH1A1THRB
SCHEMBL13451530 0.84 TSHR (0.43) TSHRALDH1A1THRB
SCHEMBL10064116 0.83 TSHR (0.39) TSHRALDH1A1THRB
SCHEMBL15498958 0.83 TSHR (0.36) TSHRALDH1A1THRB
SCHEMBL13466319 0.80 TSHR (0.34) TSHRALDH1A1THRB
SCHEMBL18455477 0.78 CA1 (0.34) CA1CA2MAPK1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117712499-A High-voltage-resistant solid-state battery and preparation method thereof 电子科技大学 2024-03-15 CN claimed
CN-116987225-B Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-12-22 CN claimed
CN-116987225-A Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-11-03 CN claimed
CN-116199858-A Enclosed isocyanate oligomer, in-situ photo-thermal dual-curing resin, preparation method and printing method thereof 上海信斯帝克新材料有限公司 2023-06-02 CN claimed
CN-117712499-A High-voltage-resistant solid-state battery and preparation method thereof 电子科技大学 2024-03-15 CN disclosed
CN-117452768-A Composition for immersion photoresist top coating 徐州博康信息化学品有限公司 2024-01-26 CN disclosed
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
CN-116987225-B Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-12-22 CN disclosed
CN-116987225-A Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-11-03 CN disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed
US-20110207051-A1 Sulfonamide-Containing Topcoat and Photoresist Additive Compositions and Methods of Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-08-25 US disclosed
WO-2011101260-A2 SULFONAMIDE-CONTAINING PHOTORESIST COMPOSITIONS AND METHODS OF USE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-08-25 WO disclosed
US-20110207052-A1 SULFONAMIDE-CONTAINING PHOTORESIST COMPOSITIONS AND METHODS OF USE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-08-25 US disclosed
WO-2011101259-A2 SULFONAMIDE-CONTAINING TOPCOAT AND PHOTORESIST ADDITIVE COMPOSITIONS AND METHODS OF USE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-08-25 WO disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME CRY1, CCNT1, CCNA1 TSHR 3135/4885ALDH1A1 382/4885THRB 3729/4885
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS C1S, C1R, CRY2 TSHR 839/4885ALDH1A1 3079/4885THRB 2348/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.