Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.45 |
| ▸ | HTT | P42858 | 1/20 | 0.45 |
| ▸ | POLB | P06746 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 1/20 | 0.43 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.42 |
| ▸ | APAF1 | O14727 | 1/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | EGLN3 | Q9H6Z9 | 1/20 | 0.41 |
| ▸ | CDYL2 | Q8N8U2 | 1/20 | 0.41 |
| ▸ | CDYL | Q9Y232 | 1/20 | 0.41 |
| ▸ | CDY1; CDY1B | Q9Y6F8 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | FGFR1 | P11362 | 1/20 | 0.40 |
| ▸ | PKM | P14618 | 1/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1884001 | 0.79 | KMT2A (0.46) | SMN1; SMN2HTTPOLBMAPTALOX15 | |
| SCHEMBL502049 | 0.78 | SMN1; SMN2 (0.66) | SMN1; SMN2HTTPOLBMAPTALOX15 | |
| SCHEMBL5884672 | 0.76 | SMN1; SMN2 (0.60) | SMN1; SMN2HTTMAPTALOX15APAF1 | |
| SCHEMBL593554 | 0.76 | KMT2A (0.48) | SMN1; SMN2HTTPOLBMAPTALOX15 | |
| SCHEMBL28860663 | 0.75 | TDP1 (0.48) | SMN1; SMN2HTTALOX15HSD17B10KMT2A | |
| SCHEMBL28235209 | 0.75 | EGLN3 (0.55) | SMN1; SMN2HTTPOLBMAPTAPAF1 | |
| SCHEMBL17103057 | 0.74 | SMN1; SMN2 (0.45) | SMN1; SMN2HTTMAPTALOX15KMT2A | |
| SCHEMBL30875906 | 0.74 | SMN1; SMN2 (0.53) | SMN1; SMN2HTTMAPTALOX15KMT2A | |
| SCHEMBL27803078 | 0.72 | SMN1; SMN2 (0.45) | SMN1; SMN2HTTMAPTALOX15HSD17B10 | |
| SCHEMBL6392854 | 0.72 | EGLN3 (0.46) | SMN1; SMN2HTTMAPTALOX15HSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9162967-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9146464-B2 | Sulfonium salt, polymer, polymer making method, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-29 | — | — | US | disclosed |
| US-9104110-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-11 | — | — | US | disclosed |
| US-9091918-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-28 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8957160-B2 | Preparation of polymer, resulting polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20140272707-A1 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-18 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20140162189-A1 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20130337378-A1 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-19 | — | — | US | disclosed |
| US-20130323647-A1 | POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-05 | — | — | US | disclosed |
| US-20130224660-A1 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| EP-2631253-A2 | Preparation of polymer, resulting polymer, resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-08-28 | — | — | EP | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-07 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, ETV1, VPS4B | SMN1; SMN2 2812/4885HTT 1166/4885POLB 172/4885 |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | ARFIP2, ARF1, ARF4 | SMN1; SMN2 3613/4885HTT 1503/4885POLB 148/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.