SCHEMBL10040400

SCHEMBL10040400

C=C(C)C(=O)OCCOc1cccc2c(O)cccc12

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ IDO1 P14902 1/20 0.44
▸ ESR1 P03372 12/20 0.42
▸ ESR2 Q92731 12/20 0.42
▸ MEN1 O00255 5/20 0.41
▸ KMT2A Q03164 5/20 0.41
▸ GAA P10253 4/20 0.41
▸ JAK2 O60674 2/20 0.41
▸ MAPT P10636 2/20 0.41
▸ SMN1; SMN2 Q16637 2/20 0.41
▸ USP2 O75604 1/20 0.41
▸ ALOX15 P16050 1/20 0.41
▸ NPSR1 Q6W5P4 1/20 0.41
▸ HSD17B10 Q99714 1/20 0.41
▸ KDM4E B2RXH2 2/20 0.41
▸ ALDH1A1 P00352 2/20 0.41
▸ HPGD P15428 1/20 0.41
▸ THRB P10828 1/20 0.41
▸ POLB P06746 2/20 0.40
▸ LMNA P02545 2/20 0.40
▸ APEX1 P27695 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10871016 0.93 THRB (0.46) SMN1; SMN2NPSR1KDM4EALDH1A1HPGD
SCHEMBL10064078 0.92 IDO1 (0.55) IDO1MEN1KMT2AGAAJAK2
SCHEMBL4578031 0.87 THRB (0.44) GAAJAK2MAPTSMN1; SMN2ALOX15
SCHEMBL11963921 0.87 MAPT (0.39) IDO1MEN1KMT2AGAAJAK2
SCHEMBL14001875 0.86 KDM4E (0.41) MAPTSMN1; SMN2KDM4EALDH1A1HPGD
SCHEMBL4580084 0.85 GAA (0.58) GAAJAK2MAPTSMN1; SMN2NPSR1
SCHEMBL12458602 0.85 KDM4E (0.40) MEN1KMT2ASMN1; SMN2NPSR1KDM4E
Benzoic Acid SCHEMBL28025657 0.85 POLB (0.49) IDO1ESR1ESR2MEN1KMT2A
SCHEMBL2033775 0.84 KDM4E (0.58) MEN1KMT2AKDM4EALDH1A1HPGD
SCHEMBL29791099 0.84 KDM4E (0.58) MEN1KMT2AKDM4EALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 — — US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 — — US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 — — US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 — — US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 — — US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 — — US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 — — US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 — — US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 — — US disclosed
US-9122147-B2 Pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2015-09-01 — — US disclosed
US-20110091812-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-21 — — US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 — — US disclosed
US-20100159404-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 — — US disclosed
US-20100159404-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 — — US disclosed
US-20100055621-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 — — US disclosed
US-20100055621-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 — — US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 — — US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 — — US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 — — US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 IDO1 4221/4885ESR1 668/4885ESR2 310/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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