Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 3/20 | 0.37 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.33 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.33 |
| ▸ | CHRNB2 | P17787 | 5/20 | 0.32 |
| ▸ | CHRNA4 | P43681 | 5/20 | 0.32 |
| ▸ | CHRNB4 | P30926 | 3/20 | 0.32 |
| ▸ | CHRNA3 | P32297 | 3/20 | 0.32 |
| ▸ | MMP8 | P22894 | 1/20 | 0.32 |
| ▸ | CHRM2 | P08172 | 2/20 | 0.31 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.31 |
| ▸ | CHRM5 | P08912 | 1/20 | 0.31 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.31 |
| ▸ | ACHE | P22303 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13998504 | 0.90 | HMGCR (0.34) | HMGCRCYP4F2CYP4A11ALDH1A1 | |
| SCHEMBL12602865 | 0.86 | HMGCR (0.38) | HMGCRCYP4F2CYP4A11 | |
| SCHEMBL2680717 | 0.86 | CA12 (0.39) | HMGCRCYP4F2CYP4A11CHRNB2CHRNA4 | |
| SCHEMBL18350228 | 0.83 | ALOX15 (0.35) | HMGCRCYP4F2CYP4A11CHRNB2CHRNA4 | |
| SCHEMBL14195312 | 0.82 | HMGCR (0.38) | HMGCRCYP4F2CYP4A11CHRM2CHRM4 | |
| SCHEMBL10335296 | 0.82 | PRKCA (0.41) | CHRNB2CHRNA4CHRNB4CHRNA3MMP8 | |
| SCHEMBL15944216 | 0.82 | HMGCR (0.31) | HMGCR | |
| SCHEMBL10044203 | 0.81 | HMGCR (0.39) | HMGCRCYP4F2CYP4A11 | |
| SCHEMBL28789480 | 0.81 | HMGCR (0.39) | HMGCRCYP4F2CYP4A11 | |
| SCHEMBL14195311 | 0.81 | GABRR1 (0.39) | HMGCRCYP4F2CYP4A11CHRNB2CHRNA4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230236506-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-9874816-B2 | Radiation-sensitive resin composition and resist pattern-forming method | JSR CORPORATION (JP) | 2018-01-23 | — | — | US | disclosed |
| US-20170363961-A9 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-12-21 | — | — | US | disclosed |
| US-20170115570-A1 | RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER | JSR CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20160202608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-07-14 | — | — | US | disclosed |
| US-20160185999-A1 | RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER | JSR CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-20130288179-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2013-10-31 | — | — | US | disclosed |
| US-20130107235-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8124233-B2 | Anti-reflection film, and polarizing plate and image display device using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8124233-B2 | Anti-reflection film, and polarizing plate and image display device using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-7771913-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7642034-B2 | Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-20090122410-A1 | ANTI-REFLECTION FILM, AND POLARIZING PLATE AND IMAGE DISPLAY DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-05-14 | — | — | US | disclosed |
| US-20090122410-A1 | ANTI-REFLECTION FILM, AND POLARIZING PLATE AND IMAGE DISPLAY DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-05-14 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RAD51, RER1, RAD1 | HMGCR 2578/4885CYP4F2 3422/4885CYP4A11 2792/4885 |
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | RER1, RAD51, RAD1 | HMGCR 3434/4885CYP4F2 3576/4885CYP4A11 3892/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | HMGCR 2954/4885CYP4F2 2988/4885CYP4A11 4158/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.