SCHEMBL10067103

SCHEMBL10067103

O=C(OCCCS(=O)(=O)O)c1ccc2ccccc2c1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 2/20 0.56
DRD3 P35462 1/20 0.56
MAPT P10636 3/20 0.46
KDM4E B2RXH2 3/20 0.46
TDP1 Q9NUW8 2/20 0.46
HTT P42858 1/20 0.46
ADRB2 P07550 1/20 0.45
ADRB1 P08588 1/20 0.45
ADRB3 P13945 1/20 0.45
CES2 O00748 1/20 0.45
CES1 P23141 1/20 0.45
PTPN1 P18031 1/20 0.43
STS P08842 1/20 0.42
HPGD P15428 2/20 0.41
NPC1 O15118 2/20 0.41
KMT2A Q03164 2/20 0.41
POLB P06746 1/20 0.41
ALDH1A1 P00352 1/20 0.41
HDAC3 O15379 1/20 0.41
HDAC4 P56524 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13310430 0.96 HRH3 (0.55) HRH3DRD3MAPTKDM4ETDP1
SCHEMBL11953044 0.91 HRH3 (0.54) HRH3DRD3MAPTKDM4ETDP1
SCHEMBL4570310 0.86 HRH3 (0.66) HRH3DRD3MAPTKDM4ETDP1
SCHEMBL27691343 0.83 HRH3 (0.64) HRH3DRD3MAPTKDM4ETDP1
SCHEMBL10172828 0.82 TDP1 (0.70) TDP1STSNPC1KMT2APOLB
SCHEMBL10172839 0.81 RAB9A (0.49) KDM4ETDP1ADRB2ADRB1ADRB3
SCHEMBL16606233 0.81 HRH3 (0.60) HRH3DRD3MAPTKDM4ETDP1
SCHEMBL11527051 0.81 HRH3 (0.64) HRH3DRD3TDP1STSHPGD
SCHEMBL13310412 0.81 MAPT (0.54) MAPTKDM4ETDP1HTTHPGD
SCHEMBL16774753 0.79 HRH3 (0.59) HRH3DRD3MAPTKDM4ETDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-07 US disclosed
US-11693314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-20220236643-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-28 US disclosed
US-10591819-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-17 US disclosed
EP-3415494-B1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2019-10-30 EP disclosed
US-20190235381-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-01 US disclosed
EP-3035121-B1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2019-03-13 EP disclosed
EP-3168207-B1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2019-02-06 EP disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-20140212808-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-31 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-20130101936-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-25 US disclosed
US-20130101936-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-25 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-20120196228-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120164577-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-28 US disclosed
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20190235381-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 HRH3 142/4885DRD3 1650/4885MAPT 2937/4885
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, PKD1, ARCN1 HRH3 3396/4885DRD3 2152/4885MAPT 2074/4885
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS TYK2, VRK2, ARSA HRH3 2115/4885DRD3 3810/4885MAPT 3598/4885
US-10591819-B2 Monomer, polymer, resist composition, and patterning process H1-2, H1-0, H1-4 HRH3 66/4885DRD3 1866/4885MAPT 2788/4885
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS EIF2B1, EIF2B5, EIF2B3 HRH3 278/4885DRD3 3414/4885MAPT 2460/4885
US-11693314-B2 Resist composition and patterning process EIF2B1, EIF2B5, EIF2B3 HRH3 278/4885DRD3 3414/4885MAPT 2460/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.