Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 2/20 | 0.56 |
| ▸ | DRD3 | P35462 | 1/20 | 0.56 |
| ▸ | MAPT | P10636 | 3/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.46 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.46 |
| ▸ | HTT | P42858 | 1/20 | 0.46 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.45 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.45 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.45 |
| ▸ | CES2 | O00748 | 1/20 | 0.45 |
| ▸ | CES1 | P23141 | 1/20 | 0.45 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.43 |
| ▸ | STS | P08842 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.41 |
| ▸ | NPC1 | O15118 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.41 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.41 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13310430 | 0.96 | HRH3 (0.55) | HRH3DRD3MAPTKDM4ETDP1 | |
| SCHEMBL11953044 | 0.91 | HRH3 (0.54) | HRH3DRD3MAPTKDM4ETDP1 | |
| SCHEMBL4570310 | 0.86 | HRH3 (0.66) | HRH3DRD3MAPTKDM4ETDP1 | |
| SCHEMBL27691343 | 0.83 | HRH3 (0.64) | HRH3DRD3MAPTKDM4ETDP1 | |
| SCHEMBL10172828 | 0.82 | TDP1 (0.70) | TDP1STSNPC1KMT2APOLB | |
| SCHEMBL10172839 | 0.81 | RAB9A (0.49) | KDM4ETDP1ADRB2ADRB1ADRB3 | |
| SCHEMBL16606233 | 0.81 | HRH3 (0.60) | HRH3DRD3MAPTKDM4ETDP1 | |
| SCHEMBL11527051 | 0.81 | HRH3 (0.64) | HRH3DRD3TDP1STSHPGD | |
| SCHEMBL13310412 | 0.81 | MAPT (0.54) | MAPTKDM4ETDP1HTTHPGD | |
| SCHEMBL16774753 | 0.79 | HRH3 (0.59) | HRH3DRD3MAPTKDM4ETDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20220236643-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-07-28 | — | — | US | disclosed |
| US-10591819-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-03-17 | — | — | US | disclosed |
| EP-3415494-B1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2019-10-30 | — | — | EP | disclosed |
| US-20190235381-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-01 | — | — | US | disclosed |
| EP-3035121-B1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2019-03-13 | — | — | EP | disclosed |
| EP-3168207-B1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2019-02-06 | — | — | EP | disclosed |
| US-20170299963-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-19 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20140212808-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-31 | — | — | US | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20190235381-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | HRH3 142/4885DRD3 1650/4885MAPT 2937/4885 |
| US-20170299963-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ASIC1, PKD1, ARCN1 | HRH3 3396/4885DRD3 2152/4885MAPT 2074/4885 |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | HRH3 2115/4885DRD3 3810/4885MAPT 3598/4885 |
| US-10591819-B2 | Monomer, polymer, resist composition, and patterning process | H1-2, H1-0, H1-4 | HRH3 66/4885DRD3 1866/4885MAPT 2788/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | HRH3 278/4885DRD3 3414/4885MAPT 2460/4885 |
| US-11693314-B2 | Resist composition and patterning process | EIF2B1, EIF2B5, EIF2B3 | HRH3 278/4885DRD3 3414/4885MAPT 2460/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.