⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36061 | 0.89 | — | — | |
| SCHEMBL36675 | 0.88 | — | — | |
| SCHEMBL36482 | 0.88 | — | — | |
| SCHEMBL3250993 | 0.87 | MMP1 (0.31) | — | |
| SCHEMBL36845 | 0.86 | CA12 (0.30) | — | |
| SCHEMBL36923 | 0.86 | MMP1 (0.30) | — | |
| SCHEMBL27565867 | 0.85 | — | — | |
| Water SCHEMBL16974951 | 0.84 | — | — | |
| SCHEMBL63951 | 0.84 | — | — | |
| SCHEMBL2958603 | 0.83 | MEN1 (0.34) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8389197-B2 | Compound, positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| US-8304163-B2 | Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-06 | — | — | US | disclosed |
| US-8216763-B2 | Photosensitive resin composition and method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-10 | — | — | US | disclosed |
| US-8206887-B2 | Positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-26 | — | — | US | disclosed |
| US-8026047-B2 | Providing film on substrate, forming resist pattern on film through lithography technique including exposure and development, and performing processing in which film is brought into contact with supercritical processing solution in which an organic matter is dissolved; accuracy, sensitivity | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2011-09-27 | — | — | US | disclosed |
| US-7981588-B2 | Negative resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7977036-B2 | Using resist composition which has a photosensitivity to a predetermined light source and bringing the resist pattern formed on the substrate into contact with a supercritical processing solution comprising a supercritical fluid which contains a crosslinking agent; fine resist pattern, etching resistance | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-7972762-B2 | resist pattern with reduced defects and excellent lithographic characteristics; acrylate ester copolymer obtained by polymerizing an ( alpha -lower alkyl)acrylate ester having tertiary alkyl ester-type acid dissociable dissolution inhibiting group, under a presence of acid | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-05 | — | — | US | disclosed |
| US-7943284-B2 | Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-17 | — | — | US | disclosed |
| US-20110091810-A1 | COMPOUND, DISSOLUTION INHIBITOR, POSITIVE TYPE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20090068583-A1 | resin comprises (2-adamantyloxymethyl)methacrylate monomers which exhibit increased alkali solubility under action of acid, and acid generator such as diphenyliodonium trifluoromethanesulfonate; reduced line edge roughness, improved shape and depth of focus | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090068588-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090047600-A1 | high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20090042129-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090035697-A1 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKAKOGYO CO.,LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090029291-A1 | POSITIVE RESIST COMPOSITION FOR THIN-FILM IMPLANTATION PROCESS AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-29 | — | — | US | disclosed |
| US-20080145784-A1 | Positive Resist Composition, Method For Resist Pattern Formation and Compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-06-19 | — | — | US | disclosed |
| US-20080124648-A1 | Resist Pattern Forming Method, Supercritical Processing Solution For Lithography Process, And Antireflection Film Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080118871-A1 | Resist Pattern Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20070196764-A1 | RESIST COMPOSITION FOR SUPERCRITICAL DEVELOPMENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-08-23 | — | — | US | disclosed |