SCHEMBL36482

SCHEMBL36482

[N-]=[N+]=C(S(=O)(=O)CCCCCCCCCCS(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1)S(=O)(=O)C1CCCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36675 1.00
SCHEMBL36923 0.95 MMP1 (0.30)
SCHEMBL3219159 0.94 NAAA (0.35)
SCHEMBL29144931 0.94 NAAA (0.35)
SCHEMBL36061 0.91
SCHEMBL10072232 0.88
SCHEMBL2958603 0.85 MEN1 (0.34)
SCHEMBL7062010 0.84 MMP1 (0.33)
SCHEMBL31589390 0.83 MMP1 (0.41)
SCHEMBL3250993 0.83 MMP1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 592 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6153733-A (Disulfonyl diazomethane compounds) TOKYO OHKA KOGYO CO., LTD. (JP) 2000-11-28 US claimed
CN-120044751-A Photosensitive resin composition 东京应化工业株式会社 2025-05-27 CN disclosed
WO-2024053579-A1 PHOTOSENSITIVE RESIN COMPOSITION 東京応化工業株式会社 2024-03-14 WO disclosed
US-20240034899-A1 CURABLE COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-01 US disclosed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
EP-3896522-A1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-20 EP disclosed
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
US-9834696-B2 Undercoat agent and method of forming pattern of layer containing block copolymer TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-05 US disclosed
US-9821338-B2 Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA TOKYO OHKA KOGYO., LTD. (JP) 2017-11-21 US disclosed
EP-1602977-A1 Positive resist composition and compound used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-07 EP disclosed
US-20050266340-A1 Positive resist composition and compound used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-01 US disclosed
US-20050244740-A1 Chemically amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-11-03 US disclosed
US-20050227170-A1 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-13 US disclosed
US-20050227171-A1 Lift-off positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-13 US disclosed
US-20050221225-A1 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-06 US disclosed
EP-1582926-A2 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-05 EP disclosed
EP-1582925-A2 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-05 EP disclosed
US-6180313-B1 SUITABLE AS RADIATION-SENSITIVE ACID-GENERATING AGENT; PHOTORESISTS FOR USE IN PHOTOLITHOGRAPHY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-01-30 US disclosed
US-6153733-A (Disulfonyl diazomethane compounds) TOKYO OHKA KOGYO CO., LTD. (JP) 2000-11-28 US disclosed