Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 1/20 | 0.30 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
| ▸ | CA7 | P43166 | 1/20 | 0.30 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL16974951 | 0.98 | — | — | |
| SCHEMBL63951 | 0.98 | — | — | |
| SCHEMBL3190765 | 0.90 | — | — | |
| SCHEMBL13379883 | 0.89 | EPHX1 (0.34) | — | |
| SCHEMBL36061 | 0.86 | — | — | |
| SCHEMBL10072232 | 0.86 | — | — | |
| Ether SCHEMBL16974949 | 0.86 | ALDH1A1 (0.31) | — | |
| SCHEMBL59313 | 0.85 | — | — | |
| SCHEMBL3250993 | 0.85 | MMP1 (0.31) | — | |
| SCHEMBL36923 | 0.83 | MMP1 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 5396 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| US-20260086460-A1 | BIFUNCTIONAL MOLECULAR GROUP STRUCTURE FOR PHOTORESIST, AND SYNTHESIS METHOD, AND USE METHOD FOR THE SAME | Shanghai Huali Integrated Circuit Corporation (CN) | 2026-03-26 | — | — | US | claimed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-118684824-A | Positive chemical amplification photoresist resin, preparation method and photoresist | 万华化学集团股份有限公司 | 2024-09-24 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| CN-115368494-B | Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof | 瑞红(苏州)电子化学品股份有限公司 | 2024-03-29 | — | — | CN | claimed |
| US-5852128-A | Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT AG (CH) | 1998-12-22 | — | — | US | claimed |
| US-5783354-A | QUATERNARY AMMONIUM COMPOUNDS | BASF AKTIENGESELLSCHAFT (DE) | 1998-07-21 | — | — | US | claimed |
| US-5770343-A | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-06-23 | — | — | US | claimed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | claimed |
| EP-0762207-A2 | Positive working photosensitive composition and method of producing relief structures | BASF AKTIENGESELLSCHAFT (DE) | 1997-03-12 | — | — | EP | claimed |
| EP-0679951-B1 | Positive resist composition | TOKYO OHKA KOGYO CO LTD (JP) | 1997-01-15 | — | — | EP | claimed |
| EP-0749044-A2 | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1996-12-18 | — | — | EP | claimed |
| EP-0679951-A1 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1995-11-02 | — | — | EP | claimed |
| US-5389491-A | Negative working resist composition | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-02-14 | — | — | US | claimed |
| EP-0440375-B1 | Diazodisulfones | WAKO PURE CHEM IND LTD (JP) | 1994-07-13 | — | — | EP | claimed |