SCHEMBL10077945

SCHEMBL10077945

CC(C)(C)CC(c1ccc(OCc2ccccc2)cc1)C(C)(C)C

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.50
CYP1A2 P05177 1/20 0.50
PTGS1 P23219 1/20 0.50
SLC6A2 P23975 1/20 0.50
CYP2C19 P33261 1/20 0.50
PTGS2 P35354 1/20 0.50
SLC6A3 Q01959 1/20 0.50
HIF1A Q16665 1/20 0.50
HDAC6 Q9UBN7 1/20 0.50
PRKCA P17252 1/20 0.49
PRKCD Q05655 1/20 0.49
MAOB P27338 4/20 0.49
GAA P10253 1/20 0.49
MAPT P10636 1/20 0.49
MAOA P21397 1/20 0.49
RAB9A P51151 1/20 0.49
SMN1; SMN2 Q16637 1/20 0.49
L3MBTL1 Q9Y468 1/20 0.49
ALOX5 P09917 1/20 0.47
BCHE P06276 2/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14317677 0.89 ALOX5 (0.55) PRKCAPRKCDMAOBMAOARAB9A
SCHEMBL14317691 0.85 MAOB (0.51) LMNAMAOBMAOASMN1; SMN2ALOX5
SCHEMBL14317673 0.85 MAOB (0.51) MAOBMAOARAB9AFFAR1
SCHEMBL14317697 0.84 RAB9A (0.51) MAOBRAB9AALOX5
SCHEMBL22211056 0.81 FFAR1 (0.41) RAB9ASMN1; SMN2FFAR1
SCHEMBL11960804 0.81 AOC3 (0.40) LMNAPRKCAPRKCDMAPTL3MBTL1
SCHEMBL30703580 0.81 MAOB (0.56) LMNACYP1A2PTGS1SLC6A2CYP2C19
SCHEMBL1919968 0.79 RIPK1 (0.45) LMNASLC6A2SLC6A3L3MBTL1
SCHEMBL19259268 0.78 NQO1 (0.52) SMN1; SMN2L3MBTL1
SCHEMBL19184458 0.78 APP (0.38) LMNAMAPTSMN1; SMN2FFAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
WO-2012173282-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-12-20 WO disclosed
EP-2412733-A1 Polymer, chemically amplified negative resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-02-01 EP disclosed
EP-2362267-A1 Chemically amplified negative resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-31 EP disclosed