Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10095092 | 0.90 | TSHR (0.37) | TSHRTHRBALDH1A1 | |
| SCHEMBL10094785 | 0.90 | TSHR (0.33) | TSHRTHRB | |
| SCHEMBL10095093 | 0.86 | — | — | |
| SCHEMBL23808379 | 0.85 | TSHR (0.40) | TSHRTHRBALDH1A1 | |
| SCHEMBL24177994 | 0.83 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL10094778 | 0.83 | TSHR (0.41) | TSHRTHRBALDH1A1 | |
| SCHEMBL23808380 | 0.83 | TSHR (0.36) | TSHRTHRBALDH1A1 | |
| SCHEMBL15337 | 0.82 | TSHR (0.50) | TSHRTHRBALDH1A1 | |
| SCHEMBL10094781 | 0.81 | THRB (0.50) | TSHRTHRBALDH1A1 | |
| SCHEMBL6049830 | 0.81 | TSHR (0.42) | TSHRTHRBALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20230161252-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161252-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-11644753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-09 | — | — | US | disclosed |
| US-11644753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-09 | — | — | US | disclosed |
| US-20230021453-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-26 | — | — | US | disclosed |
| US-20220004100-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-06 | — | — | US | disclosed |
| US-20220004101-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-06 | — | — | US | disclosed |
| US-20210405528-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-12-30 | — | — | US | disclosed |
| US-9017931-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-20140308614-A1 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-16 | — | — | US | disclosed |
| US-8835094-B2 | Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140051026-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-20 | — | — | US | disclosed |
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-13 | — | — | US | disclosed |
| US-20130084517-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-07 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RER1, AFF1, RFT1 | TSHR 2112/4885THRB 2351/4885ALDH1A1 229/4885 |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | ARFIP2, ARF1, ARF4 | TSHR 3864/4885THRB 3439/4885ALDH1A1 3196/4885 |
| US-11644753-B2 | Resist composition and patterning process | HNRNPU, NSUN2, HNRNPR | TSHR 3385/4885THRB 4503/4885ALDH1A1 4767/4885 |
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | MMAB, PARG, DNMT3A | TSHR 4036/4885THRB 3045/4885ALDH1A1 1004/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.