Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 2/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.46 |
| ▸ | MAPK1 | P28482 | 4/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.43 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14024259 | 0.87 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL13310439 | 0.86 | MAPK1 (0.49) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL9880990 | 0.85 | POLB (0.48) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL23865014 | 0.83 | POLB (0.50) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL685826 | 0.83 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL15189435 | 0.83 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL685829 | 0.83 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL11946061 | 0.81 | POLB (0.49) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL13758751 | 0.81 | ALDH1A1 (0.46) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL12973914 | 0.81 | KDM4E (0.48) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8338075-B2 | Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8338076-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8263307-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-11 | — | — | US | disclosed |
| US-8247159-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-21 | — | — | US | disclosed |
| US-8247160-B2 | Resist composition, method of forming resist pattern, and novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-21 | — | — | US | disclosed |
| US-8105747-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-7989138-B2 | Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-08-02 | — | — | US | disclosed |
| US-7919227-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-7847017-B2 | Photosensitive resin composition for optical waveguide formation, optical waveguide and method for producing optical waveguide | NEC CORPORATION (JP) | 2010-12-07 | — | — | US | disclosed |
| US-7803521-B2 | Photoresist compositions and process for multiple exposures with multiple layer photoresist systems | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-09-28 | — | — | US | disclosed |
| US-20100040970-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20090269701-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090142699-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| US-20090130590-A1 | PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-05-21 | — | — | US | disclosed |
| US-20090075204-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2009-03-19 | — | — | US | disclosed |
| US-20090068592-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090046986-A1 | PHOTOSENSITIVE RESIN COMPOSITION FOR OPTICAL WAVEGUIDE FORMATION, OPTICAL WAVEGUIDE AND METHOD FOR PRODUCING OPTICAL WAVEGUIDE | NEC CORPORATION (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20090042130-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO. LTD (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | RER1, SLC11A2, FRG1 | POLB 190/4885SMN1; SMN2 1279/4885MAPK1 1402/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.