Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 2/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.46 |
| ▸ | MAPK1 | P28482 | 4/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.43 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686262 | 0.90 | POLB (0.39) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL685829 | 0.90 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL685838 | 0.89 | POLB (0.38) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL685226 | 0.87 | MAPK1 (0.45) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL15461960 | 0.87 | POLB (0.45) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL25358238 | 0.86 | POLB (0.46) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL13310439 | 0.86 | MAPK1 (0.49) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL9880990 | 0.85 | POLB (0.48) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL686298 | 0.84 | MAPK1 (0.45) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 | |
| SCHEMBL15189435 | 0.83 | POLB (0.47) | POLBSMN1; SMN2MAPK1KDM4EALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 160 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-11782342-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-10 | — | — | US | disclosed |
| US-20230314938-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230314941-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20110039208-A1 | PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-17 | — | — | US | disclosed |
| US-20110033804-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100323296-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-16 | — | — | US | disclosed |
| US-20100316952-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-16 | — | — | US | disclosed |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-7579497-B2 | Sulfonium or iodonium salt of aryl(methyl) sulfoacetate in which the alpha carbon is fluoro- or perfluoroalkyl-substituted: triphenylsulfonium (1-(5-hydroxynaphthyl)oxyethoxycarbonyl) difluoromethanesulfonate; acid labile resin; 2-Ethyl-2-adamantyl methacrylate copolymer; improve line edge roughness | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-25 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (14 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | THEM6, INTS6, CRY1 | POLB 2255/4885SMN1; SMN2 4354/4885MAPK1 463/4885 |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, LPAR1, TLR7 | POLB 782/4885SMN1; SMN2 2929/4885MAPK1 862/4885 |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | POLB 877/4885SMN1; SMN2 4386/4885MAPK1 4308/4885 |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, H1-0, H1-2 | POLB 3703/4885SMN1; SMN2 2106/4885MAPK1 233/4885 |
| US-11782342-B2 | Salt and photoresist composition containing the same | CRY1, REN, SLC6A19 | POLB 3030/4885SMN1; SMN2 3732/4885MAPK1 339/4885 |
| US-20100316952-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | AFF1, AFF2, AFF4 | POLB 2499/4885SMN1; SMN2 2935/4885MAPK1 158/4885 |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, XPOT, ERCC4 | POLB 80/4885SMN1; SMN2 4299/4885MAPK1 490/4885 |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | RER1, AFF1, AFF4 | POLB 1434/4885SMN1; SMN2 1754/4885MAPK1 3123/4885 |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, NPPA, ERCC4 | POLB 291/4885SMN1; SMN2 4349/4885MAPK1 1075/4885 |
| US-20230314938-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | HCAR1, H1-0, H1-10 | POLB 186/4885SMN1; SMN2 4513/4885MAPK1 3279/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | POLB 146/4885SMN1; SMN2 4515/4885MAPK1 1381/4885 |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, H1-2 | POLB 1522/4885SMN1; SMN2 3424/4885MAPK1 2591/4885 |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, CHRM1 | POLB 1715/4885SMN1; SMN2 1965/4885MAPK1 959/4885 |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, H1-0, CA7 | POLB 784/4885SMN1; SMN2 3407/4885MAPK1 1662/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.