Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | EPHX2 | P34913 | 4/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.34 |
| ▸ | HPGD | P15428 | 3/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.32 |
| ▸ | NPC1 | O15118 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.31 |
| ▸ | RAB9A | P51151 | 1/20 | 0.31 |
| ▸ | GFER | P55789 | 1/20 | 0.31 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.30 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
| ▸ | KCNQ3 | O43525 | 1/20 | 0.30 |
| ▸ | KCNQ2 | O43526 | 1/20 | 0.30 |
| ▸ | KCNQ4 | P56696 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3454543 | 0.99 | POLB (0.39) | POLBEPHX2HSD11B1HPGDL3MBTL1 | |
| SCHEMBL19036857 | 0.92 | POLB (0.32) | POLB | |
| SCHEMBL12912754 | 0.91 | POLB (0.35) | POLBEPHX2HSD11B1 | |
| SCHEMBL13080639 | 0.87 | EPHX2 (0.39) | POLBEPHX2HSD11B1HPGDL3MBTL1 | |
| SCHEMBL18400994 | 0.87 | POLB (0.31) | POLB | |
| SCHEMBL4352150 | 0.85 | HPGD (0.39) | POLBHPGDL3MBTL1NPC1ALDH1A1 | |
| SCHEMBL14680960 | 0.85 | POLB (0.37) | POLBEPHX2HSD11B1HPGDL3MBTL1 | |
| SCHEMBL18785326 | 0.84 | POLB (0.39) | POLBEPHX2HSD11B1HPGDL3MBTL1 | |
| SCHEMBL3455548 | 0.82 | HPGD (0.36) | HPGDL3MBTL1ALDH1A1HSD17B10 | |
| SCHEMBL21853767 | 0.80 | POLB (0.47) | POLBEPHX2HSD11B1HPGDL3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230280652-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND | JSR CORPORATION (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11709428-B2 | Radiation-sensitive resin composition, method for forming pattern, and method for producing monomeric compound | JSR CORPORATION (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9519214-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, pattern forming method, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-13 | — | — | US | disclosed |
| US-20150338732-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-11-26 | — | — | US | disclosed |
| US-8779183-B2 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2014-07-15 | — | — | US | disclosed |
| US-8779183-B2 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2014-07-15 | — | — | US | disclosed |
| US-8691490-B2 | Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-08 | — | — | US | disclosed |
| US-8691490-B2 | Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-08 | — | — | US | disclosed |
| US-20120076996-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120076996-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2009-09-17 | — | — | US | disclosed |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2009-09-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | CASR, LIFR, LBR | POLB 1675/4885EPHX2 1550/4885HSD11B1 4474/4885 |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | POLB 1985/4885EPHX2 1971/4885HSD11B1 2562/4885 |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | POLM, CBR1, PFAS | POLB 48/4885EPHX2 177/4885HSD11B1 1367/4885 |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RPS4Y1, ETV6, RPS4X | POLB 1380/4885EPHX2 1415/4885HSD11B1 2750/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.