Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.38 |
| ▸ | TSHR | P16473 | 2/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | THRB | P10828 | 2/20 | 0.38 |
| ▸ | THRA | P10827 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | HPGD | P15428 | 1/20 | 0.38 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.37 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.37 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | LIG1 | P18858 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10134926 | 0.86 | SMN1; SMN2 (0.34) | KDM4ENPSR1TSHRTDP1L3MBTL1 | |
| SCHEMBL10134904 | 0.83 | KDM4E (0.38) | KDM4ENPSR1TSHRTDP1L3MBTL1 | |
| SCHEMBL10134924 | 0.81 | KDM4E (0.38) | KDM4ENPSR1TDP1CYP3A4ADRB2 | |
| SCHEMBL10134915 | 0.80 | CYP3A4 (0.42) | KDM4ENPSR1TSHRTDP1L3MBTL1 | |
| SCHEMBL10134900 | 0.79 | THRB (0.40) | NPSR1TDP1THRBMAPTHPGD | |
| SCHEMBL12119767 | 0.77 | KDM4E (0.37) | KDM4EL3MBTL1THRBTHRAHSD17B10 | |
| SCHEMBL10134903 | 0.77 | SERPINE1 (0.41) | KDM4ENPSR1TDP1THRBMAPT | |
| SCHEMBL18470399 | 0.76 | THRA (0.37) | KDM4ETSHRCYP3A4THRBTHRA | |
| SCHEMBL18785880 | 0.76 | ADRB2 (0.46) | KDM4ENPSR1TSHRTDP1L3MBTL1 | |
| SCHEMBL1055222 | 0.76 | TSHR (0.59) | KDM4ENPSR1TSHRL3MBTL1CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | KDM4E 3411/4885NPSR1 720/4885TSHR 2299/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.