SCHEMBL10135289

SCHEMBL10135289

O=C(OC(C(F)(F)F)C(F)(F)SOOO)C12CC3CC(O)(CC(O)(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10135283 0.89 ALDH1A1 (0.39)
SCHEMBL10135264 0.83 PRKCA (0.40)
SCHEMBL14707456 0.81 ALDH1A1 (0.30)
SCHEMBL6448357 0.79
SCHEMBL12405585 0.77 ALDH1A1 (0.35)
SCHEMBL10135290 0.76 EPHX2 (0.33)
SCHEMBL17012584 0.75 L3MBTL1 (0.33)
SCHEMBL12256210 0.75 ALDH1A1 (0.33)
SCHEMBL6367446 0.71 L3MBTL1 (0.32)
SCHEMBL16382610 0.70 CYP17A1 (0.42)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8921025-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-30 US disclosed
US-8460850-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same FUFIFILM Corporation (JP) 2013-06-11 US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-8268528-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-18 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8062828-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-22 US disclosed
US-7618764-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-17 US disclosed
US-7618765-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-17 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
US-20090233223-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-7541133-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-06-02 US disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20080268370-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-30 US disclosed
US-20080124652-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed