Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 1/20 | 0.33 |
| ▸ | CYP17A1 | P05093 | 4/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 4/20 | 0.32 |
| ▸ | PRKCA | P17252 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10135264 | 0.89 | PRKCA (0.40) | CYP17A1CYP19A1PRKCANPSR1 | |
| SCHEMBL10135287 | 0.82 | — | — | |
| SCHEMBL13642226 | 0.82 | CYP17A1 (0.38) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL23559488 | 0.80 | EPHX2 (0.35) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL18133301 | 0.80 | EPHX2 (0.35) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL14554295 | 0.80 | EPHX2 (0.35) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL6448541 | 0.80 | EPHX2 (0.35) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL15114238 | 0.79 | PRKCA (0.36) | EPHX2CYP17A1CYP19A1PRKCATSHR | |
| SCHEMBL10135283 | 0.78 | ALDH1A1 (0.39) | PRKCATSHRNPSR1 | |
| SCHEMBL19042387 | 0.78 | EPHX2 (0.33) | EPHX2CYP17A1CYP19A1PRKCATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8791288-B2 | Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8460850-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same | FUFIFILM Corporation (JP) | 2013-06-11 | — | — | US | disclosed |
| US-8450042-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-8431323-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-30 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8313886-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-20 | — | — | US | disclosed |
| US-8283104-B2 | Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-8268528-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-18 | — | — | US | disclosed |
| US-8211618-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-7618764-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-20090202943-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090202947-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO.,LTD (JP) | 2009-08-13 | — | — | US | disclosed |
| US-7541133-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | EPHX2 505/4885CYP17A1 41/4885CYP19A1 101/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.