SCHEMBL10138467

SCHEMBL10138467

CCCOC(C)Oc1ccc(C(C)CC)cc1OC

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.45
MAPT P10636 2/20 0.45
LMNA P02545 1/20 0.45
TP53 P04637 1/20 0.45
ALOX12 P18054 1/20 0.45
PPARG P37231 1/20 0.41
PPARD Q03181 1/20 0.41
PPARA Q07869 1/20 0.41
ACHE P22303 2/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
HIF1A Q16665 2/20 0.38
SOAT1 P35610 2/20 0.37
SOAT2 O75908 1/20 0.37
EPAS1 Q99814 1/20 0.37
GAA P10253 2/20 0.36
HPGD P15428 2/20 0.36
USP2 O75604 1/20 0.36
PKM P14618 1/20 0.36
ALOX15 P16050 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2740735 0.88 ALDH1A1 (0.47) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL16592945 0.86 ALDH1A1 (0.50) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL13154170 0.84 SIGMAR1 (0.41) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL10148563 0.84 NPSR1 (0.40) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL10148354 0.83 NPSR1 (0.44) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL10138456 0.83 MAPT (0.40) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL10088186 0.81 NR3C1 (0.38) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL24780244 0.81 ALDH1A1 (0.51) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL14177792 0.81 CA1 (0.47) ALDH1A1MAPTLMNATP53ALOX12
SCHEMBL8298141 0.81 ALDH1A1 (0.60) ALDH1A1MAPTLMNATP53ALOX12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed