SCHEMBL10148563

SCHEMBL10148563

CCC(C)c1ccc(OC(C)OCCOc2cc(OC)cc(OC)c2)c(OC)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.40
ALDH1A1 P00352 3/20 0.40
LMNA P02545 3/20 0.40
MAPT P10636 2/20 0.40
TP53 P04637 1/20 0.40
ALOX12 P18054 1/20 0.40
FDPS P14324 3/20 0.37
CALM1 P0DP23 1/20 0.36
MAPK1 P28482 1/20 0.36
HIF1A Q16665 1/20 0.36
GAA P10253 1/20 0.35
KCNH2 Q12809 1/20 0.35
TTR P02766 1/20 0.35
CYP1A1 P04798 1/20 0.35
NQO2 P16083 1/20 0.35
CYP1B1 Q16678 1/20 0.35
ABCG2 Q9UNQ0 1/20 0.35
MYC P01106 1/20 0.35
AHR P35869 1/20 0.35
CA1 P00915 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10148558 0.93 NPSR1 (0.39) NPSR1ALDH1A1LMNAMAPTTP53
SCHEMBL10148354 0.89 NPSR1 (0.44) NPSR1ALDH1A1LMNAMAPTTP53
SCHEMBL10148540 0.86 ALDH1A1 (0.43) NPSR1ALDH1A1LMNAMAPTGAA
SCHEMBL13588091 0.85 ALDH1A1 (0.37) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL10138467 0.84 ALDH1A1 (0.45) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL11999038 0.84 ABCB11 (0.47) AHRCA1CA2TSHRTDP1
SCHEMBL2758468 0.82 HIF1A (0.46) NPSR1ALDH1A1LMNAMAPTTP53
SCHEMBL10138456 0.81 MAPT (0.40) NPSR1ALDH1A1LMNAMAPTTP53
SCHEMBL2740735 0.81 ALDH1A1 (0.47) NPSR1ALDH1A1LMNAMAPTTP53
SCHEMBL10088185 0.81 MCHR1 (0.41) ALDH1A1LMNAMAPTTP53ALOX12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed