SCHEMBL10144917

SCHEMBL10144917

C[C@@H]1C2CC3C(=O)OC1C3O2

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
▸ MEN1 O00255 1/20 0.33
▸ KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3410223 1.00 MEN1 (0.33) MEN1KMT2A
SCHEMBL3457098 1.00 MEN1 (0.33) MEN1KMT2A
SCHEMBL10005771 1.00 MEN1 (0.33) MEN1KMT2A
SCHEMBL12020206 1.00 MEN1 (0.33) MEN1KMT2A
SCHEMBL19245679 0.77 PPP5C (0.34) MEN1KMT2A
SCHEMBL24025955 0.76 — —
SCHEMBL964481 0.76 — —
SCHEMBL15082392 0.76 — —
SCHEMBL12254932 0.76 — —
SCHEMBL15147129 0.76 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 67 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9951163-B2 (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-24 — — US disclosed
US-20160347896-A1 (METH)ACRYLATE COMPOUND, (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2016-12-01 — — US disclosed
US-20160347896-A1 (METH)ACRYLATE COMPOUND, (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2016-12-01 — — US disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 — — US disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 — — US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 — — US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 — — US disclosed
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2015-11-26 — — US disclosed
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2015-11-26 — — US disclosed
US-9182664-B2 Polymerizable fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern-forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-11-10 — — US disclosed
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 — — US disclosed
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 — — US disclosed
US-20100062366-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 — — US disclosed
US-7601479-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-13 — — US disclosed
US-7601479-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-13 — — US disclosed
US-7598015-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 — — US disclosed
EP-2090931-A1 Positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-08-19 — — EP disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 — — US disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 — — US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN AFF1, MACF1, RER1 MEN1 435/4885KMT2A 1270/4885
US-20160347896-A1 (METH)ACRYLATE COMPOUND, (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME REV1, EEF1A1, EEF1A2 MEN1 1294/4885KMT2A 418/4885
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ASH2L, PHF2 MEN1 3857/4885KMT2A 178/4885
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ARCN1, ASH2L MEN1 2242/4885KMT2A 204/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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