SCHEMBL10175343

SCHEMBL10175343

CC(C)COC(=O)C1=CC2C=CC1C2

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.42
TSHR P16473 2/20 0.42
NPC1 O15118 2/20 0.38
RAB9A P51151 2/20 0.38
SMN1; SMN2 Q16637 2/20 0.36
HTT P42858 2/20 0.36
POLB P06746 1/20 0.34
MAPT P10636 1/20 0.34
TP53 P04637 1/20 0.34
GAA P10253 1/20 0.34
HSD17B10 Q99714 1/20 0.34
HSP90AA1 P07900 1/20 0.34
HSP90AB1 P08238 1/20 0.34
CACNA1F O60840 2/20 0.33
CACNA1D Q01668 2/20 0.33
CACNA1S Q13698 2/20 0.33
CACNA1C Q13936 2/20 0.33
ADORA1 P30542 2/20 0.33
ABCC4 O15439 1/20 0.33
NR1I2 O75469 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11525930 0.80 ALDH1A1 (0.41) ALDH1A1TSHRNPC1RAB9ASMN1; SMN2
SCHEMBL11533080 0.80 CA12 (0.36) ALDH1A1TSHRSMN1; SMN2MAPTGAA
SCHEMBL12228746 0.78
SCHEMBL11526791 0.78 TSHR (0.44) ALDH1A1TSHRSMN1; SMN2TP53HSD17B10
SCHEMBL13517643 0.77 ALDH1A1 (0.50) ALDH1A1TSHRNPC1RAB9ASMN1; SMN2
SCHEMBL11526903 0.77 TSHR (0.45) ALDH1A1TSHRNPC1RAB9APOLB
SCHEMBL12228707 0.76 HTT (0.33) ALDH1A1TSHRHTTTP53GAA
SCHEMBL11529682 0.75 ALDH1A1 (0.47) ALDH1A1TSHRNPC1RAB9APOLB
SCHEMBL31296905 0.74 ALDH1A1 (0.50) ALDH1A1TSHRNPC1RAB9ASMN1; SMN2
SCHEMBL8047427 0.73 NFKB1 (0.33) MAPTTP53HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed