SCHEMBL10353554

SCHEMBL10353554

CCCCCCCCCCCCCCCC(OCCCC)C(OCCCC)(OCCCC)C(=O)[O-].[Ti+]

nearest known ligand 0.39

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.39
CA1 P00915 2/20 0.38
GPR84 Q9NQS5 7/20 0.36
FFAR1 O14842 1/20 0.34
NFKB1 P19838 1/20 0.34
ZDHHC7 Q9NXF8 1/20 0.34
TLR2 O60603 2/20 0.33
MAPT P10636 1/20 0.33
LCK P06239 1/20 0.33
PPARD Q03181 1/20 0.33
ZDHHC20 Q5W0Z9 1/20 0.33
ZDHHC2 Q9UIJ5 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL131696 0.97 CA2 (0.39) CA2CA1GPR84FFAR1NFKB1
SCHEMBL194208 0.97 CA2 (0.39) CA2CA1GPR84FFAR1NFKB1
SCHEMBL106263 0.88 CA2 (0.39) CA2CA1GPR84FFAR1NFKB1
SCHEMBL678322 0.85 GPR84 (0.40) GPR84FFAR1ZDHHC7MAPTLCK
SCHEMBL4559352 0.84 GPR84 (0.39) GPR84FFAR1ZDHHC7MAPTLCK
SCHEMBL27968380 0.79 USP2 (0.41) GPR84FFAR1ZDHHC7TLR2
SCHEMBL18831983 0.76 GPR84 (0.40) GPR84FFAR1ZDHHC7MAPTLCK
SCHEMBL28432994 0.75 GPR84 (0.39) GPR84FFAR1ZDHHC7MAPTLCK
SCHEMBL7161840 0.74 FDPS (0.36) GPR84FFAR1ZDHHC7TLR2
SCHEMBL27968388 0.73 TSHR (0.43) ZDHHC7TLR2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021029422-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2021-02-18 WO disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
US-20200333707-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2020-10-22 US disclosed
US-10725376-B2 Pattern-forming method JSR CORPORATION (JP) 2020-07-28 US disclosed
US-20180017864-A9 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-01-18 US disclosed
US-20170362412-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
EP-3229075-A1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR Corporation (JP) 2017-10-11 EP disclosed
US-20170269476-A1 PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-09-21 US disclosed
US-20170184960-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20170184961-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20150284539-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-10-08 US disclosed
EP-0101080-B2 MAGNETIC RECORDING MEDIUM MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1990-09-26 EP disclosed
EP-0101080-B1 MAGNETIC RECORDING MEDIUM MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1987-04-29 EP disclosed