Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 1/20 | 0.55 |
| ▸ | CYP11B1 | P15538 | 1/20 | 0.55 |
| ▸ | CYP11B2 | P19099 | 1/20 | 0.55 |
| ▸ | HTR1A | P08908 | 1/20 | 0.47 |
| ▸ | PLAU | P00749 | 1/20 | 0.46 |
| ▸ | MTNR1A | P48039 | 3/20 | 0.44 |
| ▸ | MTNR1B | P49286 | 3/20 | 0.44 |
| ▸ | IDO1 | P14902 | 2/20 | 0.44 |
| ▸ | MAOA | P21397 | 1/20 | 0.42 |
| ▸ | MAOB | P27338 | 1/20 | 0.42 |
| ▸ | HTR2C | P28335 | 1/20 | 0.40 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.40 |
| ▸ | HTR2B | P41595 | 1/20 | 0.40 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.40 |
| ▸ | ANPEP | P15144 | 1/20 | 0.40 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13049209 | 0.86 | IDO1 (0.52) | CYP1A2CYP11B1CYP11B2HTR1AIDO1 | |
| SCHEMBL19529545 | 0.86 | HTR1A (0.49) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL23368978 | 0.79 | S1PR1 (0.48) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL1938520 | 0.79 | HTR1A (0.43) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL6311069 | 0.79 | CYP1A2 (0.51) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL22524385 | 0.79 | CYP1A2 (0.51) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL6570375 | 0.79 | CYP1A2 (0.51) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL18785885 | 0.78 | MTNR1A (0.42) | CYP1A2CYP11B1CYP11B2HTR1APLAU | |
| SCHEMBL11852553 | 0.78 | PLAU (0.54) | HTR1APLAUMTNR1AMTNR1BIDO1 | |
| SCHEMBL4431592 | 0.76 | TDP1 (0.42) | CYP1A2CYP11B1CYP11B2HTR1APLAU |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 157 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-17 | — | — | US | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| US-11022881-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-08 | — | — | US | disclosed |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-16 | — | — | US | disclosed |
| EP-3088955-B1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-06-03 | — | — | EP | disclosed |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-20130004888-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004888-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B3, KAT5 | CYP1A2 3975/4885CYP11B1 3687/4885CYP11B2 3239/4885 |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B5, EIF2B3 | CYP1A2 3496/4885CYP11B1 2947/4885CYP11B2 2650/4885 |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, EIF2B5, EIF2B3 | CYP1A2 3496/4885CYP11B1 2947/4885CYP11B2 2650/4885 |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | CYP1A2 4499/4885CYP11B1 4821/4885CYP11B2 4697/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | CYP1A2 3279/4885CYP11B1 4237/4885CYP11B2 4030/4885 |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, PKD1, PKD2 | CYP1A2 3279/4885CYP11B1 4237/4885CYP11B2 4030/4885 |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, EEF2, EEF1G | CYP1A2 4813/4885CYP11B1 4455/4885CYP11B2 4357/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.