SCHEMBL10447633

SCHEMBL10447633

CCOCC1CCC(C2CCCCC2)CC1

nearest known ligand 0.35

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.35
CYP1A2 P05177 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18417196 0.91 CYP2D6 (0.31)
SCHEMBL10447559 0.88 ALOX5 (0.38) ALDH1A1
SCHEMBL10447403 0.86 CYP1A2 (0.42) CYP1A2
SCHEMBL10447402 0.86 CYP1A2 (0.42) CYP1A2
SCHEMBL60078 0.86 CYP1A2 (0.42) CYP1A2
SCHEMBL6301984 0.86 CYP1A2 (0.42) CYP1A2
SCHEMBL10485948 0.84
SCHEMBL10485953 0.84
SCHEMBL10704609 0.84
SCHEMBL1064453 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-27 US disclosed
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-27 US disclosed
US-11560355-B2 Onium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-24 US disclosed
US-11333974-B2 Onium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-17 US disclosed
US-11215926-B2 Sulfonium compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-04 US disclosed
US-11022881-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-01 US disclosed
US-20200319550-A1 SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-08 US disclosed
US-20200223796-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-16 US disclosed
US-20200159115-A1 NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
US-20200133122-A1 NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-30 US disclosed
EP-2524907-A1 BICYCLOHEXANE DERIVATIVE AND PRODUCTION METHOD FOR SAME Mitsubishi Gas Chemical Company, Inc. (JP) 2012-11-21 EP disclosed
US-8293458-B2 Method for forming fine pattern in semiconductor device Dongjin Semichem .Co., Ltd. (KR) 2012-10-23 US disclosed
US-8293458-B2 Method for forming fine pattern in semiconductor device Dongjin Semichem .Co., Ltd. (KR) 2012-10-23 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
EP-2230552-A2 Method for forming fine pattern in semiconductor device DONGJIN SEMICHEM CO., LTD (KR) 2010-09-22 EP disclosed
US-20100233622-A1 METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE DONGJIN SEMICHEM CO., LTD. (KR) 2010-09-16 US disclosed
US-20100233622-A1 METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE DONGJIN SEMICHEM CO., LTD. (KR) 2010-09-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11333974-B2 Onium salt, chemically amplified resist composition, and patterning process ARF5, EIF2B3, KAT5 ALDH1A1 4189/4885CYP1A2 3975/4885
US-11560355-B2 Onium salt, chemically amplified resist composition, and patterning process ARF5, EIF2B5, EIF2B3 ALDH1A1 3553/4885CYP1A2 3496/4885
US-20200223796-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ARF5, EIF2B5, EIF2B3 ALDH1A1 3553/4885CYP1A2 3496/4885
US-11215926-B2 Sulfonium compound, resist composition, and patterning process HNRNPU, PAG1, LSM14A ALDH1A1 4490/4885CYP1A2 4499/4885
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process ETV6, PKD1, PKD2 ALDH1A1 3150/4885CYP1A2 3279/4885
US-20200319550-A1 SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, PKD1, PKD2 ALDH1A1 3150/4885CYP1A2 3279/4885
US-20200133122-A1 NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ARF5, ARF4, EIF2B3 ALDH1A1 4401/4885CYP1A2 4067/4885
US-20200159115-A1 NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, EEF2, EEF1G ALDH1A1 4577/4885CYP1A2 4813/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.