Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18417196 | 0.91 | CYP2D6 (0.31) | — | |
| SCHEMBL10447559 | 0.88 | ALOX5 (0.38) | ALDH1A1 | |
| SCHEMBL10447403 | 0.86 | CYP1A2 (0.42) | CYP1A2 | |
| SCHEMBL10447402 | 0.86 | CYP1A2 (0.42) | CYP1A2 | |
| SCHEMBL60078 | 0.86 | CYP1A2 (0.42) | CYP1A2 | |
| SCHEMBL6301984 | 0.86 | CYP1A2 (0.42) | CYP1A2 | |
| SCHEMBL10485948 | 0.84 | — | — | |
| SCHEMBL10485953 | 0.84 | — | — | |
| SCHEMBL10704609 | 0.84 | — | — | |
| SCHEMBL1064453 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-17 | — | — | US | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| US-11022881-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-08 | — | — | US | disclosed |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-16 | — | — | US | disclosed |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| EP-2524907-A1 | BICYCLOHEXANE DERIVATIVE AND PRODUCTION METHOD FOR SAME | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-11-21 | — | — | EP | disclosed |
| US-8293458-B2 | Method for forming fine pattern in semiconductor device | Dongjin Semichem .Co., Ltd. (KR) | 2012-10-23 | — | — | US | disclosed |
| US-8293458-B2 | Method for forming fine pattern in semiconductor device | Dongjin Semichem .Co., Ltd. (KR) | 2012-10-23 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| EP-2230552-A2 | Method for forming fine pattern in semiconductor device | DONGJIN SEMICHEM CO., LTD (KR) | 2010-09-22 | — | — | EP | disclosed |
| US-20100233622-A1 | METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE | DONGJIN SEMICHEM CO., LTD. (KR) | 2010-09-16 | — | — | US | disclosed |
| US-20100233622-A1 | METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE | DONGJIN SEMICHEM CO., LTD. (KR) | 2010-09-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B3, KAT5 | ALDH1A1 4189/4885CYP1A2 3975/4885 |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B5, EIF2B3 | ALDH1A1 3553/4885CYP1A2 3496/4885 |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, EIF2B5, EIF2B3 | ALDH1A1 3553/4885CYP1A2 3496/4885 |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | ALDH1A1 4490/4885CYP1A2 4499/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | ALDH1A1 3150/4885CYP1A2 3279/4885 |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, PKD1, PKD2 | ALDH1A1 3150/4885CYP1A2 3279/4885 |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, ARF4, EIF2B3 | ALDH1A1 4401/4885CYP1A2 4067/4885 |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, EEF2, EEF1G | ALDH1A1 4577/4885CYP1A2 4813/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.