SCHEMBL60078

SCHEMBL60078

CCOCC1CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.42
CTSL P07711 1/20 0.36
CTSB P07858 1/20 0.36
CTSK P43235 1/20 0.36
LMNA P02545 1/20 0.36
KDM4E B2RXH2 1/20 0.35
POLB P06746 1/20 0.35
SPHK2 Q9NRA0 4/20 0.33
SPHK1 Q9NYA1 4/20 0.33
SLC1A3 P43003 2/20 0.33
SLC1A2 P43004 2/20 0.33
SLC1A1 P43005 2/20 0.33
FFAR1 O14842 1/20 0.33
SHBG P04278 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6301984 1.00 CYP1A2 (0.42) CYP1A2CTSLCTSBCTSKLMNA
SCHEMBL10447402 1.00 CYP1A2 (0.42) CYP1A2CTSLCTSBCTSKLMNA
SCHEMBL10447403 1.00 CYP1A2 (0.42) CYP1A2CTSLCTSBCTSKLMNA
SCHEMBL1064453 0.97
SCHEMBL127797 0.92
SCHEMBL14944459 0.88 CYP1A2 (0.38) CYP1A2CTSLCTSBCTSKLMNA
SCHEMBL16404859 0.88 NAAA (0.39) CYP1A2CTSLCTSBCTSKLMNA
SCHEMBL10447633 0.86 ALDH1A1 (0.35) CYP1A2
SCHEMBL131689 0.86
SCHEMBL12695097 0.86 CYP2D6 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 767 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107848928-B Process for preparing 1, 4-bis (ethoxymethyl) cyclohexane 巴斯夫欧洲公司 2022-04-15 CN claimed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20050048395-A1 Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-03-03 US disclosed
US-6846895-B2 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-01-25 US disclosed
WO-2004101533-A1 1, 3, 4-BENZOTRIAZEPIN-2-ONE SALTS AND THEIR USE AS CCK RECEPTOR LIGANDS JANSSEN PHARMACEUTICA, N.V. (US) 2004-11-25 WO disclosed
EP-1142928-B1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR CORP (JP) 2004-02-18 EP disclosed
US-20030191268-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition IWASAWA HARUO (JP) 2003-10-09 US disclosed
US-6531260-B2 Photoresist JSR CORPORATION (JP) 2003-03-11 US disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process NAF1, RALA, RSU1 CYP1A2 3948/4885CTSL 4779/4885CTSB 4644/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.