SCHEMBL104845

SCHEMBL104845

CCO[Si](C)(C)CCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.41
CHRM2 P08172 1/20 0.41
HTR1A P08908 1/20 0.41
ADRA2A P08913 1/20 0.41
CHRM1 P11229 1/20 0.41
DRD1 P21728 1/20 0.41
SLC6A2 P23975 1/20 0.41
SLC6A4 P31645 1/20 0.41
ADRA1A P35348 1/20 0.41
OPRM1 P35372 1/20 0.41
DRD3 P35462 1/20 0.41
SLC6A3 Q01959 1/20 0.41
KCNH2 Q12809 1/20 0.41
SMN1; SMN2 Q16637 5/20 0.41
TP53 P04637 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
ALDH1A1 P00352 2/20 0.38
HSD17B10 Q99714 2/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4812061 0.90 CYP4F2 (0.36) SMN1; SMN2TAAR1
SCHEMBL3338044 0.89 KCNH2 (0.47) CHRM2HTR1AADRA2ACHRM1DRD1
SCHEMBL6705483 0.86 FAAH (0.40) TDP1CHRM2HTR1AADRA2ACHRM1
SCHEMBL28731686 0.85 KCNH2 (0.46) CHRM2HTR1AADRA2ACHRM1DRD1
SCHEMBL2872464 0.84 TDP1 (0.41) TDP1CHRM2HTR1AADRA2ACHRM1
SCHEMBL14156561 0.82 CYP4F2 (0.33) TAAR1
SCHEMBL12458723 0.82 CYP4F2 (0.33)
SCHEMBL12458734 0.82 CYP4F2 (0.33)
SCHEMBL107467 0.82 TDP1 (0.43) TDP1CHRM2HTR1AADRA2ACHRM1
SCHEMBL9716563 0.82 TDP1 (0.43) TDP1CHRM2HTR1AADRA2ACHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 320 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
EP-2628745-B1 Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process SHINETSU CHEMICAL CO (JP) 2015-03-25 EP claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-12559632-B2 Weather-resistant, fungal-resistant, and stain-resistant coatings and methods of applying on wood, masonry, or other porous materials UNIVERSITY OF HOUSTON SYSTEM (US) 2026-02-24 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592752-A2 COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
US-20060127563-A1 Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device SEIKO EPSON CORPORATION (JP) 2006-06-15 US disclosed
US-20060019034-A1 Process for producing chemical adsorption film and chemical adsorption film SEIKO EPSON CORPORATION (JP) 2006-01-26 US disclosed
US-20050287392-A1 Organic electroluminescent device, method for producing the same, and electronic apparatus SEIKO EPSON CORPORATION (JP) 2005-12-29 US disclosed
US-20040214381-A1 Process for the production of organic transistor and organic transistor PIONEER CORPORATION 2004-10-28 US disclosed
EP-1471586-A1 Process for the production of organic transistor and organic transistor Pioneer Corporation (JP) 2004-10-27 EP disclosed
EP-1085022-A1 A method of manufacturing an acyloxysilane compound having functional groups bonded to silicon atoms via Si-C- bonds Dow Corning Asia, Ltd. (JP) 2001-03-21 EP disclosed
US-6060620-A Method for manufacturing an acyloxysilane compound having functional groups bonded to silicon atoms via SI--C bonds DOW CORNING ASIA, LTD. (JP) 2000-05-09 US disclosed
US-6048994-A Selective hydrosilylation method using hydrido (hydrocarbonoxy) silane DOW CORNING ASIA, LTD. (JP) 2000-04-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12559632-B2 Weather-resistant, fungal-resistant, and stain-resistant coatings and methods of applying on wood, masonry, or other porous materials GMDS, MGAM, STS TDP1 4632/4885CHRM2 1970/4885HTR1A 2486/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA TDP1 2570/4885CHRM2 3044/4885HTR1A 3682/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 TDP1 3556/4885CHRM2 85/4885HTR1A 2621/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR TDP1 3710/4885CHRM2 1767/4885HTR1A 288/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.