SCHEMBL1053059

SCHEMBL1053059

Nc1cccc(Cc2cccc(N)c2C(=O)OCc2c([N+](=O)[O-])cccc2[N+](=O)[O-])c1C(=O)OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-]

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ RAB9A P51151 3/20 0.41
▸ MAPT P10636 3/20 0.39
▸ ALDH1A1 P00352 4/20 0.38
▸ TSHR P16473 1/20 0.38
▸ MEN1 O00255 2/20 0.37
▸ KMT2A Q03164 2/20 0.37
▸ RECQL P46063 1/20 0.37
▸ MAOB P27338 1/20 0.36
▸ GPR35 Q9HC97 1/20 0.35
▸ KDM4E B2RXH2 1/20 0.35
▸ SMN1; SMN2 Q16637 3/20 0.35
▸ PDE7A Q13946 1/20 0.35
▸ CTSD P07339 1/20 0.35
▸ TDP1 Q9NUW8 1/20 0.35
▸ L3MBTL1 Q9Y468 1/20 0.35
▸ NPC1 O15118 2/20 0.34
▸ CYP3A4 P08684 1/20 0.34
▸ CYP2D6 P10635 1/20 0.34
▸ CYP2C19 P33261 1/20 0.34
▸ PTPN1 P18031 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1056771 0.90 ALDH1A1 (0.44) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL16343390 0.88 RAB9A (0.43) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL1057096 0.80 RAB9A (0.64) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL16924662 0.79 RAB9A (0.46) RAB9AMAPTALDH1A1MEN1KMT2A
SCHEMBL18941011 0.75 MAPT (0.41) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL10567759 0.74 ALDH1A1 (0.50) RAB9AMAPTALDH1A1MEN1KMT2A
SCHEMBL1055112 0.73 MAPT (0.41) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL1058873 0.72 RAB9A (0.64) RAB9AMAPTALDH1A1TSHRMEN1
SCHEMBL1058193 0.72 GPR35 (0.43) RAB9AALDH1A1TSHRMEN1KMT2A
SCHEMBL1052553 0.72 RAB9A (0.39) RAB9AALDH1A1MEN1KMT2ARECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 — — US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 — — US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 — — WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 — — WO disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 — — US disclosed
US-20180356725-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-12-13 — — US disclosed
US-20170168390-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT CHI MEI CORPORATION (TW) 2017-06-15 — — US disclosed
EP-1662322-B1 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES (JP) 2017-01-11 — — EP disclosed
US-20160299376-A1 LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE JSR CORPORATION (JP) 2016-10-13 — — US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 — — US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 — — US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 — — US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 — — US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 — — EP disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 — — US disclosed
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