Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 3/20 | 0.38 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.38 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.38 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.38 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.38 |
| ▸ | GALR3 | O60755 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | BLM | P54132 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Propylene Glycol Diacetate SCHEMBL2466143 | 0.97 | TDP1 (0.42) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL107287 | 0.97 | TDP1 (0.42) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL107443 | 0.95 | TDP1 (0.41) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL107109 | 0.93 | TDP1 (0.40) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL9849173 | 0.92 | TDP1 (0.37) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL106590 | 0.92 | TDP1 (0.39) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL5485959 | 0.89 | TDP1 (0.37) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL7923868 | 0.89 | TDP1 (0.37) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL23116479 | 0.88 | TDP1 (0.34) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| Propylene Glycol Diacetate SCHEMBL4196506 | 0.88 | ALDH1A1 (0.35) | TDP1TSHRCHRM2CHRM4CHRM1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2518562-B1 | A patterning process | SHINETSU CHEMICAL CO (JP) | 2019-01-16 | — | — | EP | disclosed |
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| US-10109485-B2 | Silicon-containing condensate, composition for forming a silicon-containing resist under layer film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-10-23 | — | — | US | disclosed |
| US-9971245-B2 | Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9880470-B2 | Composition for forming a coating type silicon-containing film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-30 | — | — | US | disclosed |
| EP-2500775-B1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHINETSU CHEMICAL CO (JP) | 2018-01-03 | — | — | EP | disclosed |
| US-20170154766-A1 | SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-06-01 | — | — | US | disclosed |
| US-9627204-B2 | Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9580623-B2 | Patterning process using a boron phosphorus silicon glass film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-28 | — | — | US | disclosed |
| US-20100283133-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | HAMADA YOSHITAKA | 2010-11-11 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-2196858-A1 | Coated-type silicon-containing film stripping process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| US-20100086870-A1 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-20080290472-A1 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |