SCHEMBL107208

SCHEMBL107208

O=C(O)/C=C\C(=O)OS(c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HCAR2 Q8TDS4 9/20 0.49
HDAC3 O15379 1/20 0.41
TNKS O95271 1/20 0.41
HDAC4 P56524 1/20 0.41
HDAC1 Q13547 1/20 0.41
HDAC7 Q8WUI4 1/20 0.41
HDAC2 Q92769 1/20 0.41
HDAC10 Q969S8 1/20 0.41
HDAC11 Q96DB2 1/20 0.41
HDAC8 Q9BY41 1/20 0.41
TNKS2 Q9H2K2 1/20 0.41
HDAC6 Q9UBN7 1/20 0.41
HDAC9 Q9UKV0 1/20 0.41
HDAC5 Q9UQL6 1/20 0.41
KDM4E B2RXH2 4/20 0.38
MAPT P10636 3/20 0.38
HPGD P15428 1/20 0.38
HSD17B10 Q99714 1/20 0.38
ALDH1A1 P00352 4/20 0.37
LMNA P02545 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL105268 0.94 MAPT (0.41) HCAR2HDAC3TNKSHDAC4HDAC1
SCHEMBL105909 0.94 MAPT (0.41) HCAR2HDAC3TNKSHDAC4HDAC1
SCHEMBL28088080 0.83 HCAR2 (0.47) HCAR2HDAC3TNKSHDAC4HDAC1
SCHEMBL501366 0.78 THRB (0.43) KDM4EMAPTHPGDHSD17B10ALDH1A1
SCHEMBL29023623 0.76 SMN1; SMN2 (0.43) HCAR2KDM4EMAPTHPGDHSD17B10
SCHEMBL105291 0.74 TSHR (0.44) MAPTHSD17B10ALDH1A1LMNACA1
SCHEMBL105014 0.74 TSHR (0.44) HSD17B10ALDH1A1LMNACA1CA2
Phenyl Fumarate SCHEMBL528592 0.71 HCAR2 (0.55) HCAR2HDAC3TNKSHDAC4HDAC1
Phenyl Fumarate SCHEMBL528591 0.71 HCAR2 (0.55) HCAR2HDAC3TNKSHDAC4HDAC1
SCHEMBL106041 0.71 BCAT1 (0.42) KDM4EHPGDHSD17B10ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250237954-A1 Composition For Forming Metal-Containing Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
CN-117866204-B Silicon-containing surface modifier and etching-resistant agent underlayer film composition, and preparation method and application thereof 福建泓光半导体材料有限公司 2024-12-13 CN disclosed
CN-112947000-B Composition for forming silicon-containing EUV resist underlayer film containing sulfonate 日产化学工业株式会社 2024-11-29 CN disclosed
US-12084592-B2 Coating composition for pattern inversion NISSAN CHEMICAL CORPORATION (JP) 2024-09-10 US disclosed
CN-117866204-A Silicon-containing surface modifier and etching-resistant agent underlayer film composition, and preparation method and application thereof 福建泓光半导体材料有限公司 2024-04-12 CN disclosed
CN-117866205-A Silicon-containing surface modifier and resist underlayer film composition, and preparation method and application thereof 福建泓光半导体材料有限公司 2024-04-12 CN disclosed
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
EP-4250008-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-27 EP disclosed
CN-112947000-A Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt 日产化学工业株式会社 2021-06-11 CN disclosed
US-11022884-B2 Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2021-06-01 US disclosed
US-20100248493-A1 PHOTOMASK BLANK, PROCESSING METHOD, AND ETCHING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-30 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-2196858-A1 Coated-type silicon-containing film stripping process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-16 EP disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed