SCHEMBL108706

SCHEMBL108706

C=C(C)C(=O)OC1C2CC3CC(C2)CC1(O)C3

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4198531 0.84 ALDH1A1 (0.37) ALDH1A1
SCHEMBL450766 0.84 ALDH1A1 (0.31) ALDH1A1
SCHEMBL10615471 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL3953694 0.81
SCHEMBL3053351 0.81 MEN1 (0.33) ALDH1A1
SCHEMBL7038409 0.80
SCHEMBL971472 0.80 TSHR (0.31) ALDH1A1
SCHEMBL3957946 0.80 ALDH1A1 (0.36) ALDH1A1
SCHEMBL453582 0.80 EPHX2 (0.31) ALDH1A1
SCHEMBL19052008 0.78 ALDH1A1 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 188 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260029717-A1 PITCH SPLITTING FOR EUV IMAGING TOKYO ELECTRON LTD (JP) 2026-01-29 US claimed
WO-2026100410-A1 IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER 三菱瓦斯化学株式会社 2026-05-15 WO disclosed
US-20260029717-A1 PITCH SPLITTING FOR EUV IMAGING TOKYO ELECTRON LTD (JP) 2026-01-29 US disclosed
US-20250250216-A1 CYCLIC COMPOUND HAVING IODINE ATOM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-08-07 US disclosed
CN-120136704-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 CN disclosed
CN-120136703-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 CN disclosed
WO-2025079631-A1 COMPOSITION, RESIN COMPOSITION, COMPOSITION FOR FILM FORMATION, COMPOSITION FOR FORMING LITHOGRAPHIC FILM, AND COMPOSITION FOR FORMING RESIST FILM 三菱瓦斯化学株式会社 2025-04-17 WO disclosed
WO-2025079648-A1 COMPOUND, COMPOSITION, RESIN COMPOSITION, COMPOSITION FOR FORMING FILM, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, AND COMPOSITION FOR FORMING RESIST FILM 三菱瓦斯化学株式会社 2025-04-17 WO disclosed
US-20250109325-A1 RELEASABILITY-IMPARTING AGENT, ADHESIVE COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2025-04-03 US disclosed
US-12264073-B2 Composite material ADEKA CORPORATION (JP) 2025-04-01 US disclosed
EP-1376233-A2 Method of producing a resin for a radiation-sensitive material Daicel Chemical Industries, Ltd. (JP) 2004-01-02 EP disclosed
US-20030225233-A1 Novel process for producing anhydride-containing polymers for radiation sensitive compositions ARCH SPECIALTY CHEMICALS, INC. 2003-12-04 US disclosed
WO-2003080688-A1 A NOVEL PROCESS FOR PRODUCING ANHYDRIDE-CONTAINING POLYMERS FOR RADIATION SENSITIVE COMPOSITIONS ARCH SPECIALTY CHEMICALS, INC. (US) 2003-10-02 WO disclosed
US-20030143482-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-31 US disclosed
US-20030138724-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-20030138725-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-20030138726-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-6506534-B1 A negative resist composition developable with basic solutions and being itself soluble in basic aqueous solutions but, upon exposure to said image-forming radiation, being rendered insoluble in basic aqueous solutions at its exposed sections FUJITSU LIMITED (JP) 2003-01-14 US disclosed
US-6479211-B1 FOR FAR ULTRAVIOLET EXPOSURE, WHICH CAN FORM A HIGHLY PRECISE PATTERN USING LIGHT IN THE FAR ULTRAVIOLET REGION INCLUDING AN EXCIMER LASER RAY, PARTICULARLY, IN THE REGION OF 250 NM OR LESS FUJI PHOTO FILM CO., LTD. (JP) 2002-11-12 US disclosed
EP-0936504-A1 A radiation-sensitive material and a method for forming a pattern therewith Daicel Chemical Industries, Ltd. (JP) 1999-08-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250250216-A1 CYCLIC COMPOUND HAVING IODINE ATOM IGF1R, SSTR1, CCNI ALDH1A1 1637/4885
US-20260029717-A1 PITCH SPLITTING FOR EUV IMAGING ELAVL3, ELAVL1, RUVBL2 ALDH1A1 1924/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.